The magnetic order in antiferromagnetic (AF) materials is hard to control with external magnetic fields. However, recent advances in detecting and manipulating AF order electrically have opened up new prospects for these materials in basic and applied spintronics research. Using x-ray magnetic linear dichroism microscopy, we show here that staggered effective fields generated by electrical current can induce reproducible and reversible modification of the antiferromagnetic domain structure in microdevices fabricated from a tetragonal CuMnAs thin film. The current-induced domain switching is inhomogeneous at the submicron level. A clear correlation between the average domain orientation and the anisotropy of the electrical resistance is demonstrated.
@article{arxiv.1607.08478,
title = {Imaging current-induced switching of antiferromagnetic domains in CuMnAs},
author = {M. J. Grzybowski and P. Wadley and K. W. Edmonds and R. Beardsley and V. Hills and R. P. Campion and B. L. Gallagher and J. S. Chauhan and V. Novak and T. Jungwirth and F. Maccherozzi and S. S. Dhesi},
journal= {arXiv preprint arXiv:1607.08478},
year = {2017}
}