Related papers: Imaging current-induced switching of antiferromagn…
Antiferromagnets have a number of favourable properties as active elements in spintronic devices, including ultra-fast dynamics, zero stray fields and insensitivity to external magnetic fields . Tetragonal CuMnAs is a testbed system in…
Antiferromagnets (AFs) attract much attention due to potential applications in spintronics. Both the electric current and the electric field are considered as tools suitable to control properties and the N\'eel vector direction of AFs.…
We probe the current-induced magnetic switching of insulating antiferromagnet/heavy metals systems, by electrical spin Hall magnetoresistance measurements and direct imaging, identifying a reversal occurring by domain wall (DW) motion. We…
Antiferromagnetic materials hold potential for use in spintronic devices with fast operation frequencies and field robustness. Despite the rapid progress in proof-of-principle functionality in recent years, there has been a notable lack of…
Efficient manipulation of antiferromagnetic (AF) domains and domain walls has opened up new avenues of research towards ultrafast, high-density spintronic devices. AF domain structures are known to be sensitive to magnetoelastic effects,…
Antiferromagnetic materials as active components in spintronic devices promise insensitivity against external magnetic fields, the absence of own magnetic stray fields, and ultrafast dynamics at the picosecond time scale. Materials with…
Electrical and optical pulsing allow for manipulating the order parameter and magnetoresistance of antiferromagnets, opening novel prospects for digital and analog data storage in spintronic devices. Recent experiments in CuMnAs have…
The effects of current induced N\'eel spin-orbit torques on the antiferromagnetic domain structure of epitaxial Mn$_2$Au thin films were investigated by X-ray magnetic linear dichroism - photoemission electron microscopy (XMLD-PEEM). We…
Spintronics in ferromagnetic metals is built on a complementary set of phenomena in which magnetic configurations influence transport coefficients and transport currents alter magnetic configurations. In this Letter we propose that…
Electrical switching of N\'eel order in an antiferromagnetic insulator is desirable as a basis for memory applications. Unlike electrically-driven switching of ferromagnetic order via spin-orbit torques, electrical switching of…
We theoretically examine a cross effect of magnetic field and charge current on antiferromagnetic domain wall dynamics. Since antiferromagnetic materials are largely insensitive to external magnetic fields in general, charge current has…
When a spin-polarized current flows through a ferromagnetic (FM) metal, angular momentum is transferred to the background magnetization via spin-transfer torques. In antiferromagnetic (AFM) materials, however, the corresponding problem is…
We predict that a lateral electrical current in antiferromagnets can induce non-equilibrium N\'eel order fields, i.e. fields whose sign alternates between the spin sublattices, which can trigger ultra-fast spin-axis reorientation. Based on…
Using x-ray magnetic circular and linear dichroism techniques, we demonstrate a collinear exchange coupling between an epitaxial antiferromagnet, tetragonal CuMnAs, and an Fe surface layer. A small uncompensated Mn magnetic moment is…
We demonstrate how shape-induced strain can be used to control antiferromagnetic order in NiO/Pt thin films. For rectangular elements patterned along the easy and hard magnetocrystalline anisotropy axes of our film, we observe different…
Antiferromagnetic (AFM) materials with zero or vanishingly small macroscopic magnetization are nowadays the constituent elements of spintronic devices. However, possibility to use them as active elements that show nontrivial controllable…
Recent research works have shown that the magnetic order in some antiferromagnetic materials can be manipulated and detected electrically, due to two physical mechanisms: Neel-order spin-orbit torques and anisotropic magnetoresistance.…
Antiferromagnets (AFMs) hold promise for applications in digital logic. However, switching AFM domains is challenging, as magnetic fields do not couple to the bulk antiferromagnetic order parameter. Here we show that magnetic-field-driven…
When electric and magnetic fields are applied together on a magnetoelectric antiferromagnet, the domain state is subject to reversal. Although the initial and final conditions are saturated single-domain states, the process of reversal may…
We demonstrate stable and reversible current induced switching of large-area ($> 100\;\mu m^2$) antiferromagnetic domains in NiO/Pt by performing concurrent transport and magneto-optical imaging measurements in an adapted Kerr microscope.…