Related papers: Current-driven writing process in antiferromagneti…
Antiferromagnets (AFMs) exhibit spin arrangements with no net magnetization, positioning them as promising candidates for spintronics applications. While electrical manipulation of the single-crystal AFMs, composed of periodic spin…
Ferromagnets are known to support spin-polarized currents that control various spin-dependent transport phenomena useful for spintronics. On the contrary, fully compensated antiferromagnets are expected to support only globally spin-neutral…
The bias driven perpendicular magnetic anisotropy is a magneto-electric effect that can realize 90$^\circ$ magnetization rotation and even 180$% ^\circ $ flip along the easy axis in the ferromagnets with a minimal energy consumption. This…
Spin-transfer torque (STT) and spin-orbit torque (SOT) are spintronic phenomena allowing magnetization manipulation using electrical currents. Beyond their fundamental interest, they allow developing new classes of magnetic memories and…
Louis Neel pointed out in his Nobel lecture that while abundant and interesting from a theoretical viewpoint, antiferromagnets did not seem to have any applications. Indeed, the alternating directions of magnetic moments on individual atoms…
Due to nonrelativistic altermagnetic spin splitting effect (ASSE), altermagnets can generate time-reversal-odd spin current and spin splitting torque (SST) with spin polarization parallel to the N\'eel vector. Hence the effective…
In the field of antiferromagnetic (AFM) spintronics, information about the N\'eel vector, AFM domain sizes, and spin-flop fields is a prerequisite for device applications but is not available easily. We have investigated AFM domains and…
We report the direct observation of switching of the N\'eel vector of antiferromagnetic (AFM) domains in response to electrical pulses in micron-scale Pt/$\alpha$-Fe$_2$O$_3$ Hall bars using photoemission electron microscopy. Current pulses…
Antiferromagnets offer much faster dynamics compared to their ferromagnetic counterparts but their order parameter is extremely difficult to detect and control. So far, controlling the N\'eel order parameter electrically is limited to only…
We inject current pulses into uniformly magnetized patterns of thin films of the itinerant ferromagnet SrRuO3, while monitoring the effective temperature of the patterns during the current injection. We gradually increase the amplitude of…
We predict ultrafast switching in a chiral anti-ferromagnet that occurs at femtosecond times, nearly 5 orders of magnitude faster than the torque induced nanosecond switching previously observed. The physical mechanism, quite different from…
Electrical detection of the 180 deg spin reversal, which is the basis of the operation of ferromagnetic memories, is among the outstanding challenges in the research of antiferromagnetic spintronics. Analogous effects to the ferromagnetic…
We report on the switching of a magnetic vortex core in a sub-micron Permalloy disk, induced by a short current pulse applied in the film plane. Micromagnetic simulations including the adiabatic and non-adiabatic spin-torque terms are used…
Efficient and fast manipulation of antiferromagnets has to date remained a challenging task, hindering their application in spintronic devices. For ultrafast operation of such devices, it is highly desirable to be able to control the…
In thin ferromagnetic films, the predominance of the magnetic shape anisotropy leads to in-plane magnetizations. The simplest domain wall in this geometry is the one-dimensional Neel wall that connects two magnetizations of opposite sign by…
Boron (B) alloying transforms the magnetoelectric antiferromagnet Cr2O3 into a multifunctional single-phase material which enables electric field driven {\pi}/2 rotation of the N\'eel vector. Nonvolatile, voltage-controlled N\'eel vector…
The magnetic order in antiferromagnetic (AF) materials is hard to control with external magnetic fields. However, recent advances in detecting and manipulating AF order electrically have opened up new prospects for these materials in basic…
The recently discovered altermagnets, featured by the exotic correlation of magnetic exchange interaction and alternating crystal environments, have offered exciting cutting-edge opportunities for spintronics. Nevertheless, the…
Fast domain wall motion in systems with perpendicular magnetization is necessary for many novel applications such as the racetrack memory, domain wall logic devices and artificial synapses. The domain wall speed has been greatly improved…
We study current-induced switching of the N\'eel vector in CoO/Pt bilayers to understand the underlaying antiferromagnetic switching mechanism. Surprisingly, we find that for ultra-thin CoO/Pt bilayers electrical pulses along the same path…