Related papers: Performing Stateful Logic Using Spin-Orbit Torque …

Spin orbit torque (SOT) has been considered as one of the promising technologies for the next-generation magnetic random access memory (MRAM). So far, SOT has been widely utilized for inducing various modes of magnetization switching.…

A new spin based logic device is proposed. It is comprised of a common free ferromagnetic layer separated by a tunnel junction from three inputs and one output with separate fixed layers. It has the functionality of a majority gate and is…

With ultra-fast writing capacity and high reliability, the spin-orbit torque is regarded as a promising alternative to fabricate next-generation magnetic random access memory. However, the three-terminal setup can be challenging when…

We propose model magneto-logic NOR and NAND gates using a spin valve pillar, wherein the logical operation is induced by spin-polarized currents which also form the logical inputs. The operation is facilitated by the simultaneous presence…

In this paper, spin-orbit torque (SOT) magnetoresistive random-access memory (MRAM) devices are leveraged to realize sigmoidal neurons and binarized synapses for a single-cycle analog in-memory computing (IMC) architecture. First, an analog…

Spin-orbit torque (SOT) based magnetic random access memory (MRAM) is envisioned as an emerging non-volatile memory due to its ultra-high speed and low power consumption. The field-free switching schema in SOT devices is of great interest…

Circuit obfuscation is a frequently used approach to conceal logic functionalities in order to prevent reverse engineering attacks on fabricated chips. Efficient obfuscation implementations are expected with lower design complexity and…

A new proposal is given for designing a non-volatile, completely spin logic device, that can be reprogrammed for different functional classical logical operations. We use the concept of bias driven spin dependent circular current and…

Spin-Orbit Torque (SOT) Magnetic Random-Access Memories (MRAM) have shown promising results towards the realization of fast, non-volatile memory systems. Oxidation of the heavy-metal (HM) layer of the SOT-MRAM has been proposed as a method…

Write asymmetry, the significantly different write current for high-to-low and low-to-high resistance switching because of natural stochastic behaviors of magnetization, is a fundamental issue in magnetic random-access memory (MRAM). For…

We demonstrate approximate storage based on NAND-like spin-orbit torque (SOT) MRAM, through "device-modeling-architecture" explorations. We experimentally achieve down to 1E-5 level selectivity. Selectivity and low-power solutions are…

As data-intensive applications increasingly strain conventional computing systems, processing-in-memory (PIM) has emerged as a promising paradigm to alleviate the memory wall by minimizing data transfer between memory and processing units.…

Invertible logic can operate in one of two modes: 1) a forward mode, in which inputs are presented and a single, correct output is produced, and 2) a reverse mode, in which the output is fixed and the inputs take on values consistent with…

Modern data-intensive applications demand memory solutions that deliver high-density, low-power, and integrated computational capabilities to reduce data movement overhead. This paper presents the use of Gain-Cell embedded DRAM (GC-eDRAM) -…

As CMOS nears the end of the projected scaling roadmap, significant effort has been devoted to the search for new materials and devices that can realize memory and logic. Spintronics, is one of the promising directions for the Post-CMOS…

Spin-Orbit Torque (SOT) Magnetic Random-Access Memory (MRAM) devices offer improved power efficiency, nonvolatility, and performance compared to static RAM, making them ideal, for instance, for cache memory applications. Efficient…

While magnetic solid-state memory has found commercial applications to date, magnetic logic has rather remained on a conceptual level so far. Here, we discuss open challenges of different spintronic logic approaches, which use magnetic…

We demonstrate for the first time that functionally complete digital logic can be created by using three terminal devices each consisting of a magnetic tunnel junction (MTJ) and spin transfer torque (STT) element with a shared free magnetic…

We report the use of spin-orbit torque (SOT) magnetoresistive random-access memory (MRAM) to implement a probabilistic binary neural network (PBNN) for resource-saving applications. The in-plane magnetized SOT (i-SOT) MRAM not only enables…

Using type-x spin-orbit torque (SOT) switching scheme, in which the easy axis (EA) of the ferromagnetic (FM) layer and the charge current flow direction are collinear, is possible to realize a lower-power-consumption, higher-density, and…