Related papers: Performing Stateful Logic Using Spin-Orbit Torque …
Magnetization switching by spin-orbit torque (SOT) via spin Hall effect represents as a competitive alternative to that by spin-transfer torque (STT) used for magnetoresistive random access memory (MRAM), as it does not require high-density…
Recent advances in metamaterials and fabrication techniques have revived interest in mechanical computing. Contrary to techniques relying on static deformations of buckling beams or origami-based lattices, the integration of wave scattering…
Memristor networks are capable of low-power and massive parallel processing and information storage. Moreover, they have presented the ability to apply for a vast number of intelligent data analysis applications targeting mobile edge…
Spin-orbit torque (SOT) magnetization switching of ferromagnets with large perpendicular magnetic anisotropy has a great potential for the next-generation non-volatile magnetoresistive random-access memory (MRAM). It requires a…
Memristors are non-volatile nano-resistors. Their resistance can be tuned by applied currents or voltages and set to a large number of levels between two limit values. Thanks to these properties, memristors are ideal building blocks for a…
In-memory computing (IMC) with single instruction multiple data (SIMD) setup enables memory to perform operations on the stored data in parallel to achieve high throughput and energy saving. To instruct a SIMD IMC hardware to compute a…
A brief review is given of the physical implementation of quantum computation within spin systems or other two-state quantum systems. The importance of the controlled-NOT or quantum XOR gate as the fundamental primitive operation of quantum…
Computing in-memory (CiM) has emerged as an attractive technique to mitigate the von-Neumann bottleneck. Current digital CiM approaches for in-memory operands are based on multi-wordline assertion for computing bit-wise Boolean functions…
Topological quantum materials, with novel spin textures and broken crystal symmetries are suitable candidates for spintronic memory technologies. Their unique electronic properties, such as protected surface states and exotic…
Table reasoning with large language models (LLMs) plays a critical role in building intelligent systems capable of understanding and analyzing tabular data. Despite recent progress, existing methods still face key limitations: their…
The NOT operation is a reversible transformation acting on a 1-bit logical state, and should be achievable in a physically reversible manner at no energetic cost. We experimentally demonstrate a bit-flip protocol based on the momentum of an…
Spin orbit torque (SOT) provides an efficient way of generating spin current that promises to significantly reduce the current required for switching nanomagnets. However, an in-plane current generated SOT cannot deterministically switch a…
Prior studies have shown that the retention time of the non-volatile spin-transfer torque RAM (STT-RAM) can be relaxed in order to reduce STT-RAM's write energy and latency. However, since different applications may require different…
Memristor-aided logic (MAGIC) design style holds a high promise for realizing digital logic-in-memory functionality. The ability to implement a specific gate in a MAGIC design style hinges on the SET-to-RESET threshold ratio. The TaOx…
Embedded non-volatile memory technologies such as resistive random access memory (RRAM) and spin-transfer torque magnetic RAM (STT MRAM) are increasingly being researched for application in neuromorphic computing and hardware accelerators…
In digital circuits, a Flip-Flop (FF) is a circuit element that has two stable states which can be used to store and remember state information. The state of the circuit can be changed by applying signals to the control input. FFs are the…
Spin-orbit torque is a promising mechanism for writing magnetic memories, while field-effect transistors are the gold-standard device for logic operation. The spin-orbit torque field effect transistor (SOTFET) is a proposed device that…
A novel scheme for non-volatile digital computation is proposed using spin-transfer torque (STT) and automotion of magnetic domain walls (DWs). The basic computing element is composed of a lateral spin valve (SV) with two ferromagnetic (FM)…
We present a feasibility study of logic circuits utilizing spin waves for information transmission and processing. As an alternative approach to the transistor-based architecture, logic circuits with spin wave bus do not use charge as an…
Voltage-gate assisted spin-orbit torque (VGSOT) writing scheme combines the advantages from voltage control of magnetic anisotropy (VCMA) and spin-orbit torque (SOT) effects, enabling multiple benefits for magnetic random access memory…