Related papers: Performing Stateful Logic Using Spin-Orbit Torque …
Storage Class Memory (SCM) is a class of memory technology which has recently become viable for use. Their namearises from the fact that they exhibit non-volatility of data, similar to secondary storage while also having latencies…
The possible use of spin and magnets in place of charge and capacitors to store and process information is well known. Magnetic tunnel junctions are being widely investigated and developed for magnetic random access memories. These are two…
Large Language Models (LLMs) can generate reasoning tokens before their final answer to boost performance on complex tasks. While these sequences seem like human thought processes, empirical evidence reveals that they are not a faithful…
The speed of modern digital systems is severely limited by memory latency (the ``Memory Wall'' problem). Data exchange between Logic and Memory is also responsible for a large part of the system energy consumption. Logic--In--Memory (LiM)…
Computing-in-memory (CIM) is proposed to alleviate the processor-memory data transfer bottleneck in traditional Von-Neumann architectures, and spintronics-based magnetic memory has demonstrated many facilitation in implementing CIM…
Quantum error correction and fault-tolerant quantum computation are two fundamental concepts which make quantum computing feasible. While providing a theoretical means with which to ensure the arbitrary accuracy of any quantum circuit,…
Recent works in dialogue state tracking (DST) focus on an open vocabulary-based setting to resolve scalability and generalization issues of the predefined ontology-based approaches. However, they are inefficient in that they predict the…
Following the success of Moore's predictions, we are approaching a limit in the miniaturization of semiconductors for computing materials. This has led to the exploration of various research paths to develop alternative computing paradigms,…
Chain-of-thought (CoT) significantly enhances the performance of large language models (LLMs) across a wide range of tasks, and prior research shows that CoT can theoretically increase expressiveness. However, there is limited mechanistic…
We demonstrated current-induced four-state magnetization switching in a trilayer system using spin-orbit torques. The memory device contains two Co layers with different perpendicular magnetic anisotropy, separated by a space layer of Pt.…
Resistive Random Access Memory (RRAM) crossbar arrays are an attractive memory structure for emerging nonvolatile memory due to their high density and excellent scalability. Their ability to perform logic operations using RRAM devices makes…
We propose spin transfer torque--magnetoresistive random access memory (STT-MRAM) based on magneto-resistance and spin transfer torque physics of band-pass spin filtering. Utilizing the electronic analogs of optical phenomena such as…
In the quest for novel, scalable and energy-efficient computing technologies, many non-charge based logic devices are being explored. Recent advances in multi-ferroic materials have paved the way for electric field induced low energy and…
The past years have seen widening efforts at increasing Prolog's declarativeness and expressiveness. Tabling has proved to be a viable technique to efficiently overcome SLD's susceptibility to infinite loops and redundant subcomputations.…
The authors proposed and computationally analyzed nonvolatile static random access memory (NV-SRAM) architecture using metal-oxide-semiconductor field-effect transistor (MOSFET) type of spin-transistors referred to as pseudo-spin-MOSFET…
The end of Moore's law for CMOS technology has prompted the search for low-power computing alternatives, resulting in several promising proposals based on magnetic logic[1-8]. One approach aims at tailoring arrays of nanomagnetic islands in…
Non-volatile memory (NVM) technologies such as spin-transfer torque magnetic random access memory (STT-MRAM) and spin-orbit torque magnetic random access memory (SOT-MRAM) have significant advantages compared to conventional SRAM due to…
Processing-using-DRAM (PuD) is an emerging paradigm that leverages the analog operational properties of DRAM circuitry to enable massively parallel in-DRAM computation. PuD has the potential to reduce or eliminate costly data movement…
Superconducting rings with exactly $\Phi _0/2$ magnetic flux threading are analogous of Ising spins having two degenerate states which can be used to store binary information. When brought close these rings interact by means of magnetic…
Memory function formalism or projection operator technique is an extremely useful method to study the transport and optical properties of various condensed matter systems. A recent revival of its uses in various correlated electronic…