Spin-Orbit Torque (SOT) Magnetic Random-Access Memories (MRAM) have shown promising results towards the realization of fast, non-volatile memory systems. Oxidation of the heavy-metal (HM) layer of the SOT-MRAM has been proposed as a method to increase its energy efficiency. But the results are widely divergent due to the difficulty in controlling the HM oxidation because of its low enthalpy of formation. Here, we reconcile these differences by performing a gradual oxidation procedure, which allows correlating the chemical structure to the physical properties of the stack. As an HM layer, we chose Pt because of the strong SOT and the low enthalpy of formation of its oxides. We find evidence of an oxide inversion layer at the FM/HM interface: the oxygen is drawn into the FM, while the HM remains metallic near the interface. We further demonstrate that the oxygen migrates in the volume of the FM layer rather than being concentrated at the interface. Consequently, we find that the intrinsic magnitude of the SOT is unchanged compared to the fully metallic structure. The previously reported apparent increase of SOTs is not intrinsic to platinum oxide and instead arises from systemic changes produced by oxidation.
@article{arxiv.2112.07034,
title = {Mechanism of Spin-Orbit Torques in Platinum Oxide Systems},
author = {Jayshankar Nath and Alexandru Vladimir Trifu and Mihai Sebastian Gabor and Ali Hallal and Stephane Auffret and Sebastien Labau and Aymen Mahjoub and Edmond Chan and Avinash Kumar Chaurasiya and Amrit Kumar Mondal and Haozhe Yang and Eva Schmoranzerova and Mohamed Ali Nsibi and Isabelle Joumard and Anjan Barman and Bernard Pelissier and Mairbek Chshiev and Gilles Gaudin and Ioan Mihai Miron},
journal= {arXiv preprint arXiv:2112.07034},
year = {2022}
}