We demonstrate approximate storage based on NAND-like spin-orbit torque (SOT) MRAM, through "device-modeling-architecture" explorations. We experimentally achieve down to 1E-5 level selectivity. Selectivity and low-power solutions are established by numerical calculation workflow. System-level power consumption is evaluated in the 512 KB last-level cache according to 5 quality levels. Error-tolerant applications, such as image processing, alleviate the demand for selectivity down to the 5E-2 level, leading to 54% ~ 61% energy-saving. Our proposal paves the novel and suitable path for high-density and low-power NAND-like SOT-MRAM.
@article{arxiv.2404.05528,
title = {NAND-like SOT-MRAM-based Approximate Storage for Error-Tolerant Applications},
author = {Min Wang and Zhengyi Hou and Chenyi Wang and Zhengjie Yan and Shixing Li and Ao Du and Wenlong Cai and Jinhao Li and Hongchao Zhang and Kaihua Cao and Kewen Shi and Bi Wang and Yuanfu Zhao and Qingyi Xiang and Zhaohao Wang and Weisheng Zhao},
journal= {arXiv preprint arXiv:2404.05528},
year = {2024}
}