Spin-Transfer-Torque Driven Magneto-Logic Gates Using Nano Spin-Valve Pillars
Abstract
We propose model magneto-logic NOR and NAND gates using a spin valve pillar, wherein the logical operation is induced by spin-polarized currents which also form the logical inputs. The operation is facilitated by the simultaneous presence of a constant controlling magnetic field. The same spin-valve assembly can also be used as a magnetic memory unit. We identify regions in the parameter space of the system where the logical operations can be effectively performed. The proposed gates retain the non-volatility of a magnetic random access memory,(MRAM). We verify the functioning of the gate by numerically simulating its dynamics, governed by the appropriate Landau-Lifshitz-Gilbert equation with the spin-transfer torque term. The flipping time for the logical states is estimated to be within nano seconds.
Keywords
Cite
@article{arxiv.1401.0723,
title = {Spin-Transfer-Torque Driven Magneto-Logic Gates Using Nano Spin-Valve Pillars},
author = {C. Sanid and S. Murugesh},
journal= {arXiv preprint arXiv:1401.0723},
year = {2014}
}
Comments
10 pages, 6 figures. arXiv admin note: substantial text overlap with arXiv:1401.0627