Related papers: Ultrathin AlScN for low-voltage driven ferroelectr…
This work demonstrates a large area process for atomically thin 2D semiconductors to unlock the technological upscale required for their commercial uptake. The new atomic layer deposition (ALD) and conversion technique yields large area…
Non-collinear antiferromagnets, with either an L1$_{2}$ cubic crystal lattice (e.g. Mn$_{3}$Ir and Mn$_{3}$Pt) or a D0$_{19}$ hexagonal structure (e.g. Mn$_{3}$Sn and Mn$_{3}$Ge), exhibit a number of novel phenomena of interest to…
In the rapidly evolving area of integrated photonics, there is a growing need for materials that satisfy the particular requirements of increasingly complex and specialized devices and applications. Present photonic material platforms have…
Multifunctional materials composed of ultrathin magnetic films with perpendicular magnetic anisotropy combined with ferroelectric substrates represent a new approach toward low power, fast, high density spintronics. Here we demonstrate…
Going down to the limit of ultrathin films holds promise for a new generation of devices such as ferroelectric tunnel junctions or resistive memories. However, these length scales also make the devices sensitive to parasitic effects related…
Ferroelectric memories experienced a revival in the last decade due to the discovery of ferroelectricity in HfO$_2$-based nanometer-thick thin films. These films exhibit exceptional silicon compatibility, overcoming the scaling and…
Using ammonia as nitrogen source for molecular beam epitaxy, the GaN-based diluted magnetic semiconductor Ga1-xMnxN is successfully grown with Mn concentration up to x~6.8% and with p-type conductivity. The films have wurtzite structure…
Noncollinear antiferromagnets with novel magnetic orders, vanishingly small net magnetization and exotic spin related properties hold enormous promise for developing next-generation, transformative spintronic applications. A major ongoing…
Heterostructures consisting of alternating GaN/AlN epitaxial layers represent the building-blocks of state-of-the-art devices employed for active cooling and energy-saving lightning. Insights into the heat conduction of these structures are…
ScN material is an emerging semiconductor with an indirect bandgap. It has attracted attention for its thermoelectric properties, use as seed layers, and for alloys for piezoelectric application. ScN or other transition metal nitride…
Epitaxial FeRh(100) films (CsCl structure, $\sim 10\ ML\ $ thick), prepared {\it in-situ} on a W(100) single crystal substrate, have been investigated via valence band and core level photoemission. The presence of the temperature-induced,…
Due to the shorter channel length allowing faster ion/charge movement, nanoscale molecular thin films can be attractive electronic components for next-generation high-performing energy storage devices. However, controlling chemical…
Zirconia and hafnia based thin films have attracted tremendous attention in the last decade due to their unexpected ferroelectric behavior at the nanoscale, which facilitates the downscaling of ferroelectric devices. The present work…
In this article, we present results of our recent work of epitaxially-grown aluminum (epi-Al) on antimonide heterostructures, where the epi-Al thin film is grown at either room temperature or below zero $^o$C. A sharp superconducting…
(001)-oriented thin films of the three-dimensional Dirac semimetal cadmium arsenide can realize a quantum spin Hall insulator and other kinds of topological physics, all within the flexible architecture of epitaxial heterostructures. Here,…
We reported on the observation of extremely high-density ($>10^{14}$cm$^{-2}$) 2D electron gas in N-polar AlGaN/GaN heterostructures grown on sapphire substrates. Due to introducing the GaN/AlN superlattice (SL) back barrier between the GaN…
Whereas ferroelectricity may vanish in ultra-thin ferroelectric films, it is expected to emerge in ultra-thin anti-ferroelectric films, sparking people's interest in using antiferroelectric materials as an alternative to ferroelectric ones…
Ferroelectric materials with switchable electric polarization hold great promise for a plethora of emergent applications, such as post-Moore's law nanoelectronics, beyond-Boltzmann transistors, non-volatile memories, and above-bandgap…
Continuously graded ferromagnetic thin films represent a new class of magnonic materials, where a spin-wave resonance spectrum can be tuned in resonance frequencies/fields, number of modes and even dispersion law by the magnetic properties…
We report a synthetic route to achieve high electron mobility at room temperature in epitaxial La:BaSnO$_3$/SrZrO$_3$ heterostructures prepared on several oxide substrates. Room-temperature mobilities of 157, 145, and 143…