In this article, we present results of our recent work of epitaxially-grown aluminum (epi-Al) on antimonide heterostructures, where the epi-Al thin film is grown at either room temperature or below zero oC. A sharp superconducting transition at T∼1.3 K is observed in these epi-Al films. We further show that supercurrent states are realized in Josephson junctions fabricated in the epi-Al/antimonide heterostructures with mobility μ∼1.0×106 cm2/Vs. These results clearly demonstrate we have achieved growing high-quality epi-Al/antimonide heterostructures, a promising platform for the exploration of Josephson junction effects for quantum information science and microelectronics applications.
@article{arxiv.2410.06085,
title = {Epitaxial aluminum layer on antimonide heterostructures for exploring Josephson junction effects},
author = {W. Pan and K. R. Sapkota and P. Lu and A. J. Muhowski and W. M. Martinez and C. L. H. Sovinec and R. Reyna and J. P. Mendez and D. Mamaluy and S. D. Hawkins and J. F. Klem and L. S. L. Smith and D. A. Temple and Z. Enderson and Z. Jiang and E. Rossi},
journal= {arXiv preprint arXiv:2410.06085},
year = {2025}
}