Related papers: Ultrathin AlScN for low-voltage driven ferroelectr…
An environmentally stable mesoscopic thin film of Au of certain thickness has been deposited thermally on top of a Ag+ implanted oxide substrate to develop a close to room temperature superconductor. This thin film has been deposited in two…
Gradual modification of the magnetic properties in ferromagnetic films has recently been proposed as an effective method to channel and control spin waves for the development of new functionalities in magnonic devices. Here, we investigate…
We have studied ferroelectricity and photovoltaic effects in atomic layer deposited (ALD) 40-nm thick SnTiO$_{x}$ films deposited directly onto p-type (001)Si substrate. These films showed well-saturated, square and repeatable hysteresis…
Investigating the thermoelectric properties of ferromagnets is important for the development of future microelectronic devices for efficient energy conversion purposes. Ferromagnetic Mn$_5$Ge$_3$C$_x$ thin films with a Curie temperature up…
Recently, the superionic thermoelectrics, which typify the novel `phonon-liquid electron-crystal' concept, have attracted enormous attention due to their ultralow thermal conductivity and high figure-of-merit (zT). However, their high zT is…
Ferroelectricity at room temperature has been demonstrated in nanometer-thin quasi 2D croconic acid thin films, by the polarization hysteresis loop measurements in macroscopic capacitor geometry, along with observation and manipulation of…
The strain dependent functional properties of epitaxial transition metal oxide films can be significantly modified via substrate selection. However, large lattice mismatches preclude dislocation-free epitaxial growth on ferroelectric…
Nitride-based superconductors represent a family of superconducting thin film materials displaying higher quality than their corresponding bare superconductor when used in devices for applications such as cosmic radiation sensing. In recent…
For the first time, the fatigue behavior involving external oxygen in highly Sc-doped AlN ferroelectric film was observed using transmission electron microscope techniques. Despite increasing the Sc composition in AlScN film contributes to…
Ultrathin aluminum nitride (AlN) films are of great interest for integration into nanoelectromechanical systems for actuation and sensing. Given the direct relationship between crystallographic texture and piezoelectric response, x-ray…
Over the last decade, progress in wide bandgap, III-V materials systems based on gallium nitride (GaN) has been a major driver in the realization of high power and high frequency electronic devices. Since the highly conductive,…
We study the molecular beam epitaxy of self-assembled Al$\mathrm{_{1-x}}$Sc$\mathrm{_{x}}$N nanowires on conductive TiN layers and demonstrate their application in piezoelectric nanogenerators. Wurtzite Al$\mathrm{_{1-x}}$Sc$\mathrm{_{x}}$N…
Commercial production of integrated photonic devices is limited by scalability of desirable material platforms. We explore a relatively new photonic material, AlScN, for its use in electro-optic modulation. Its CMOS-compatibility could…
Topologically protected edge state transport in quantum materials is dissipationless and features quantized Hall conductance, and shows great potential in highly fault-tolerant computing technologies. However, it remains elusive about how…
Silicon photonics has offered a versatile platform for the recent development of integrated optomechanical circuits. However, silicon is limited to wavelengths above 1100 nm and does not allow device operation in the visible spectrum range…
Multiferroic materials open up the possibility to design novel functionality in electronic devices, with low energy consumption. However, there are very few materials that show multiferroicity at room temperature, which is essential to be…
Understanding the polarization switching mechanisms at play in ferroelectric materials is crucial for their exploitation in electronic devices. The conventional centrosymmetric reference structure-based mechanism which accounts for…
A15 superconductors are distinguished by their high critical temperatures, magnetic fields, and current-carrying capabilities. Among them, Nb$_3$Al is of particular interest for superconducting quantum circuits as a means to extend device…
The discovery of interfacial ferroelectricity in two-dimensional rhombohedral (3R)-stacked semiconductors opens up a new pathway for achieving ultrathin computing-in-memory devices. However, exploring ferroelectricity switching in natural…
We report on the growth by evaporation under high vacuum of high-quality thin films of Fe(phen)2(NCS)2 (phen=1,10-phenanthroline) that maintain the expected electronic structure down to a thickness of 10 nm and that exhibit a…