We report on the growth by evaporation under high vacuum of high-quality thin films of Fe(phen)2(NCS)2 (phen=1,10-phenanthroline) that maintain the expected electronic structure down to a thickness of 10 nm and that exhibit a temperature-driven spin transition. We have investigated the current-voltage characteristics of a device based on such films. From the space charge-limited current regime, we deduce a mobility of 6.5x10-6 cm2/V?s that is similar to the low-range mobility measured on the widely studied tris(8-hydroxyquinoline)aluminium organic semiconductor. This work paves the way for multifunctional molecular devices based on spin-crossover complexes.
@article{arxiv.0908.0607,
title = {Study of molecular spin-crossover complex Fe(phen)2(NCS)2 thin films},
author = {Shengwei Shi and G. Schmerber and J. Arabski and J. -B. Beaufrand and D. J. Kim and S. Boukari and M. Bowen and N. T. Kemp and N. Viart and G. Rogez and E. Beaurepaire and H. Aubriet and J. Petersen and C. Becker and D. Ruch},
journal= {arXiv preprint arXiv:0908.0607},
year = {2014}
}