Related papers: Ultrathin AlScN for low-voltage driven ferroelectr…
Ferroelectrics display spontaneous and switchable electrical polarization. Until recently, ferroelectricity was believed to disappear at the nanoscale; now, nano-ferroelectrics are being considered in numerous applications. This renewed…
A printing process for high-resolution transfer of all components for organic electronic devices on plastic substrates has been developed and demonstrated for pentacene (Pn), poly (3-hexylthiophene) and carbon nanotube (CNT) thin-film…
A newly identified class of magnetic materials called altermagnets has attracted much attention due to the practical properties of spin-splitting bands akin to ferromagnets and small compensated magnetization akin to antiferromagnets. These…
We report on spin atomistic calculations used to model static and dynamic magnetic properties of inhomogeneous ultrathin iron films. Active magnetic layers in next-generation spintronic devices are becoming so thin that they exhibit some…
The use of highly efficient and solarblind GaN photocathodes as part of multichannel plate UV detectors for applications in astronomy would strongly benefit from the direct growth of GaN on typical window materials with high transmission…
Highly-crystalline ferroelectric oxides integrated on Si hold great promise for energy-efficient memory and logic technologies. Exploiting epitaxial strain engineering in these materials is, however, severely hampered on Si, where the large…
Antiferromagnetic materials are of great interest for spintronics. Here we present a comprehensive study of the growth, structural characterization, and resulting magnetic properties of thin films of the non-collinear antiferromagnet…
Fe3GaTe2 (FGaT), a two-dimensional (2D) layered ferromagnetic metal, exhibits a high Curie temperature (TC) ~ 360 K along with strong perpendicular magnetic anisotropy (PMA), making it a promising material candidate for next-generation…
Ultrathin MgB2 superconducting films with a thickness down to 7.5 nm are epitaxially grown on (0001) Al2O3 substrate by hybrid physical-chemical vapor deposition method. The films are phase-pure, oxidation-free and continuous. The 7.5 nm…
Alternating layers of granular Iron (Fe) and Titanium dioxide (TiO$_{2-\delta}$) were deposited on (100) Lanthanum aluminate (LaAlO$_3$) substrates in low oxygen chamber pressure using a controlled pulsed laser ablation deposition…
Exploring new topological materials with large topological nontrivial bandgaps and simple composition is attractive for both theoretical investigation and experimental realization. Recently alpha tin ({\alpha}-Sn) has been predicted to be…
We report electrically switchable polarization and ferroelectric domain scaling over a thickness range of 5-100 nm in BiFeO3 films deposited on [110] vicinal substrates. The BiFeO3 films of variable thickness were deposited with SrRuO3…
AlN is an ultra-wide bandgap semiconductor which has been developed for applications including power electronics and optoelectronics. Thermal management of these applications is the key for stable device performance and allowing for long…
A major issue in the development of the technology of nitride based materials is the choice of substrate. The structural and optical properties of the layers are intimately connected to the substrate material used in the epitaxial growth.…
Mechanical exfoliation of bulk crystals has been widely used to obtain thin topological insulator (TI) flakes for device fabrication. However, such a process produces only micro-sized flakes that are highly irregular in shape and thickness.…
The integration of graphene (Gr) with nitride semiconductors is highly interesting for applications in high-power/high-frequency electronics and optoelectronics. In this work, we demonstrated the direct growth of Gr on Al0.5Ga0.5N/sapphire…
Heavy computational demands from artificial intelligence (AI) leads the research community to explore the design space for functional materials that can be used for high performance memory and neuromorphic computing hardware. Novel device…
Epitaxial strain is a powerful means to engineer emergent phenomena in thin films and heterostructures. Here, we demonstrate that KTaO3, a cubic perovskite in bulk form, can be epitaxially strained into a highly tunable ferroelectric. KTaO3…
Ferroelectric Al$_{1-x}$B$_x$N thin films are grown on highly doped and plasma treated (100) n-type Si. We demonstrate ferroelectricity for x = <0.01, 0.02, 0.06, 0.08, 0.13, and 0.17 where the n-type Si is both the substrate and bottom…
The generation and control of spin currents are crucial for advancing next-generation spintronic technologies. These technologies depend on materials capable of efficiently sourcing and interconverting spin and charge currents, while…