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The conventional von Neumann architecture has been revealed as a major performance and energy bottleneck for rising data-intensive applications. %, due to the intensive data movements. The decade-old idea of leveraging in-memory processing…
The present von Neumann computing paradigm involves a significant amount of information transfer between a central processing unit (CPU) and memory, with concomitant limitations in the actual execution speed. However, it has been recently…
Predictable execution time upon accessing shared memories in multi-core real-time systems is a stringent requirement. A plethora of existing works focus on the analysis of Double Data Rate Dynamic Random Access Memories (DDR DRAMs), or…
This paper examines the coexistence of resistive, capacitive, and inertia (virtual inductive) effects in memristive devices, focusing on ReRAM devices, specifically the interface-type or non-filamentary analog switching devices. A…
The rapid advancement of neuromorphic technology aims to address the memory wall challenge inherent in conventional von Neumann architectures. This paper critically examines current digital neuromorphic processors and their strategies to…
This tutorial describes challenges and possible avenues for the implementation of the components of a solid-state system, which emulates a biological brain. The tutorial is devoted mostly to a charge-based (i.e. electric controlled)…
Spatial and temporal variability of HfOx-based resistive random access memory (RRAM) are investigated for manufacturing and product designs. Manufacturing variability is characterized at different levels including lots, wafers, and chips.…
Magnetic random access memory (MRAM) is a leading emergent memory technology that is poised to replace current non-volatile memory technologies such as eFlash. However, the scaling of MRAM technologies is heavily affected by…
Memristor technology shows great promise for energy-efficient computing, yet it grapples with challenges like resistance drift and inherent variability. For filamentary Resistive RAM (ReRAM), one of the most investigated types of memristive…
Resistive memory (RM) based neuromorphic systems can emulate synaptic plasticity and thus support continual learning, but they generally lack biologically inspired mechanisms for active forgetting, which are critical for meeting modern data…
High capacity and scalable memory systems play a vital role in enabling our desktops, smartphones, and pervasive technologies like Internet of Things (IoT). Unfortunately, memory systems are becoming increasingly prone to faults. This is…
DRAM-based main memory and its associated components increasingly account for a significant portion of application performance bottlenecks and power budget demands inside the computing ecosystem. To alleviate the problems of storage density…
Remote Memory Access (RMA) is an emerging mechanism for programming high-performance computers and datacenters. However, little work exists on resilience schemes for RMA-based applications and systems. In this paper we analyze fault…
Quantum memories with high efficiency and fidelity are essential for long-distance quantum communication and information processing. Techniques have been developed for quantum memories based on atomic ensembles. The atomic memories relying…
Two-dimensional materials have been discovered to exhibit non-volatile resistive switching (NVRS) phenomenon. In our work, we reported the universal NVRS behavior in a dozen metal dichalcogenides, featuring low switching voltage, large…
Repeated off-chip memory accesses to DRAM drive up operating power for data-intensive applications, and SRAM technology scaling and leakage power limits the efficiency of embedded memories. Future on-chip storage will need higher density…
The increasing demand for high-density data storage leads to an increasing interest in novel memory concepts with high scalability and the opportunity of storing multiple bits in one cell. A promising candidate is the redox-based resistive…
The equilibrium ON and OFF states of resistive random access memory (RRAM) are due to formation and destruction of a conducting filament. The laws of thermodynamics dictate that these states correspond to the minimum of free energy. Here,…
Synaptic devices with linear high-speed switching can accelerate learning in artificial neural networks (ANNs) embodied in hardware. Conventional resistive memories however suffer from high write noise and asymmetric conductance tuning,…
RRAM technology has experienced explosive growth in the last decade, with multiple device structures being developed for a wide range of applications. However, transitioning the technology from the lab into the marketplace requires the…