Related papers: Recent advances in inorganic oxides-based resistiv…
The rapid growth of digital technology has driven the need for efficient storage solutions, positioning memristors as promising candidates for next-generation non-volatile memory (NVM) due to their superior electrical properties. Organic…
Transition-metal-oxide based resistance random access memory is a promising candidate for next-generation universal non-volatile memories. Searching and designing appropriate new materials used in the memories becomes an urgent task. Here,…
Functional oxides based resistive memories are recognized as potential candidate for the next-generation high density data storage and neuromorphic applications. Fundamental understanding of the compositional changes in the functional…
Resistance switching devices are of special importance because of their application in resistive memories (RRAM) which are promising candidates for replacing current nonvolatile memories and realize storage class memories. These devices…
Dynamic Random Access Memory (DRAM) is the de-facto choice for main memory devices due to its cost-effectiveness. It offers a larger capacity and higher bandwidth compared to SRAM but is slower than the latter. With each passing generation,…
To support emerging applications ranging from holographic communications to extended reality, next-generation mobile wireless communication systems require ultra-fast and energy-efficient baseband processors. Traditional complementary…
Organic electronics is very promising due to the flexibility, modifiability as well as variety of the available organic molecules. Efforts are going on to use organic materials for the realization of memory devices. In this regard resistive…
Large-scale integration of emerging nanoscale non-volatile memory devices, e.g. resistive random-access memory (RRAM), can enable a new generation of neuromorphic computers that can solve a wide range of machine learning problems. Such…
To support emerging applications ranging from holographic communications to extended reality, next-generation mobile wireless communication systems require ultra-fast and energy-efficient (UFEE) baseband processors. Traditional…
Dynamic Random Access Memory (DRAM) is the prevalent memory technology used to build main memory systems of almost all computers. A fundamental shortcoming of DRAM is the need to refresh memory cells to keep stored data intact. DRAM refresh…
As conventional memory technologies are challenged by their technological physical limits, emerging technologies driven by novel materials are becoming an attractive option for future memory architectures. Among these technologies,…
Non-Volatile Main Memories (NVMMs) have recently emerged as promising technologies for future memory systems. Generally, NVMMs have many desirable properties such as high density, byte-addressability, non-volatility, low cost, and energy…
The ramp-reversal memory (RRM) effect in metal-insulator transition metal oxides (TMOs), a non-volatile resistance change induced by repeated temperature cycling, has attracted considerable interest in neuromorphic computing and…
As data-intensive applications increasingly strain conventional computing systems, processing-in-memory (PIM) has emerged as a promising paradigm to alleviate the memory wall by minimizing data transfer between memory and processing units.…
The geometrical and performance scaling of silicon CMOS integrated circuit technology over the past 50 years has enabled many affordable new products for business and consumer applications. Recognizing that Flash is approaching its ultimate…
Electrochemical random-access memory (ECRAM) is a recently developed and highly promising analog resistive memory element for in-memory computing. One longstanding challenge of ECRAM is attaining retention time beyond a few hours. This…
We study the resistive switching (RS) mechanism as way to obtain multi-level memory cell (MLC) devices. In a MLC more than one bit of information can be stored in each cell. Here we identify one of the main conceptual difficulties that…
RRAM-based in-Memory Computing is an exciting road for implementing highly energy efficient neural networks. This vision is however challenged by RRAM variability, as the efficient implementation of in-memory computing does not allow error…
Over the past two decades, the storage capacity and access bandwidth of main memory have improved tremendously, by 128x and 20x, respectively. These improvements are mainly due to the continuous technology scaling of DRAM (dynamic…
Transition-metal oxide films, demonstrating the effects of both threshold and nonvolatile memory resistive switching, have been recently proposed as candidate materials for storage-class memory. In this work we describe some experimental…