Related papers: Recent advances in inorganic oxides-based resistiv…
Moore's law has long served the semiconductor industry as the driving force for producing ever-advancing electronics technologies. However, given the economic implications and technological challenges associated with the present…
Metallic oxides encased within Metal-Insulator-Metal (MIM) structures can demonstrate both unipolar and bipolar switching mechanisms, rendering them the capability to exhibit a multitude of resistive states and ultimately function as memory…
Gradual switching between multiple resistance levels is desirable for analog in-memory computing using resistive random-access memory (RRAM). However, the filamentary switching of $HfO_x$-based conventional RRAM often yields only two stable…
Maintaining benefits of CMOS technology scaling is becoming challenging due to increased manufacturing complexities and unwanted passive power dissipations. This is particularly challenging in SRAM, where manufacturing precision and leakage…
Cache serves as a temporary data memory module in many general-purpose processors and domain-specific accelerators. Its density, power, speed, and reliability play a critical role in enhancing the overall system performance and quality of…
Both SRAM and DRAM have stopped scaling: there is no technical roadmap to reduce their cost (per byte/GB). As a result, memory now dominates system cost. This paper argues for a paradigm shift from today's simple memory hierarchy toward…
The emergence of memristor technologies brings new prospects for modern electronics via enabling novel in-memory computing solutions and affordable and scalable reconfigurable hardware implementations. Several competing memristor…
In our earlier work [Appl. Phys. Lett. 92, 022509 (2008)], we proposed nonvolatile vortex random access memory (VRAM) based on the energetically stable twofold ground state of vortex-core magnetizations as information carrier. Here we…
Resistance switching memory cells such as electrochemical metallization cells and valence change mechanism cells have the potential to revolutionize information processing and storage. However, the creation of deterministic resistance…
Despite the impressive search rate of one key per clock cycle, the update stage of a random-access-memory-based content-addressable-memory (RAM-based CAM) always suffers high latency. Two primary causes of such latency include: (1) the…
Interface-type resistive switching (RS) devices with lower operation current and more reliable switching repeatability exhibits great potential in the applications for data storage devices and ultra-low-energy computing. However, the…
The continuous shift of computational bottlenecks to the memory access and data transfer, especially for AI applications, poses the urgent needs of re-engineering the computer architecture fundamentals. Many edge computing applications,…
In recent years a large number of problems have been considered in external memory models of computation, where the complexity measure is the number of blocks of data that are moved between slow external memory and fast internal memory…
Optical static random access memory (O-SRAM) is one of the key components required for achieving the goal of ultra-fast, general-purpose optical computing. We propose and design a novel O-SRAM using fabrication-friendly photonics device…
Pr1-xCaxMnO3 (PCMO) based resistance random access memory (RRAM) is attractive in large scale memory and neuromorphic applications as it is non-filamentary, area scalable and has multiple resistance states along with excellent endurance and…
Solid-state memory is an essential component of the digital age. With advancements in healthcare technology and the Internet of Things (IoT), the demand for ultra-dense, ultra-low-power memory is increasing. In this review, we present a…
We introduce \emph{Adaptive RAG Memory} (ARM), a retrieval-augmented generation (RAG) framework that replaces a static vector index with a \emph{dynamic} memory substrate governed by selective remembrance and decay. Frequently retrieved…
CMOS technology and its continuous scaling have made electronics and computers accessible and affordable for almost everyone on the globe; in addition, they have enabled the solutions of a wide range of societal problems and applications.…
We derive phenomenological model for endurance-write time switching tradeoff for nonvolatile memories with thermally activated switching mechanisms. The model predicts linear to cubic dependence of endurance on write time for metal oxide…
Graphene oxide (GO)-based resistive random access memory (RRAM) is one of the most promising emerging non-volatile memories for flexible electronics because of its simple structure and low fabrication cost. The reported switching mechanism…