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Endurance Write Speed Tradeoffs in Nonvolatile Memories

Other Condensed Matter 2016-10-10 v1
Authors: Dmitri Strukov
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Abstract

We derive phenomenological model for endurance-write time switching tradeoff for nonvolatile memories with thermally activated switching mechanisms. The model predicts linear to cubic dependence of endurance on write time for metal oxide memristors and flash memories, which is partially supported by experimental data for the breakdown of metal-oxide thin films.

Keywords

nonvolatile memory endurance write speed phenomenological model thermally activated switching metal oxide memristor flash memory

Cite

@article{arxiv.1511.07109,
  title  = {Endurance Write Speed Tradeoffs in Nonvolatile Memories},
  author = {Dmitri Strukov},
  journal= {arXiv preprint arXiv:1511.07109},
  year   = {2016}
}

Comments

10 pages, 3 figures

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