Related papers: How to Report and Benchmark Emerging Field-Effect …
The performance and scalability of two-dimensional (2D) field-effect transistors (FETs) are strongly influenced by geometry-defined electrostatics. In most 2D FET studies, the gate overlaps with the source and drain electrodes, allowing the…
Methods for building fair predictors often involve tradeoffs between fairness and accuracy and between different fairness criteria, but the nature of these tradeoffs varies. Recent work seeks to characterize these tradeoffs in specific…
While the on-chip processing power in circuit QED devices is growing rapidly, an open challenge is to establish high-fidelity quantum links between qubits on different chips. Here, we show entanglement between transmon qubits on different…
Nanoscale electronic devices are of great interest for all kinds of applications like switching, energy conversion and sensing. The objective of this chapter, however, is not to discuss specific devices or applications. Rather it is to…
This work presents the development of an electronic system for the electrical characterization of pH sensors based on the extended gate field effect transistor (EGFET). We designed an electronic circuit with a microcontroller (PIC15F14K50)…
Node embedding methods find latent lower-dimensional representations which are used as features in machine learning models. In the last few years, these methods have become extremely popular as a replacement for manual feature engineering.…
This study considers various semiparametric difference-in-differences models under different assumptions on the relation between the treatment group identifier, time and covariates for cross-sectional and panel data. The variance lower…
Our paper presents a non-destructive thermal transient measurement method that is able to reveal differences even in the micron size range of MEMS structures. Devices of the same design can have differences in their sacrificial layers as…
Graphene, due to its unique electronic structure favoring high carrier mobility, is considered a promising material for use in high-speed electronic devices in the post-silicon electronic era. For this reason, experimental research on…
In order to quantify the relative performance of different testbed quantum computing devices, it is useful to benchmark them using a common protocol. While some benchmarks rely on the performance of random circuits and are generic in…
Thickness engineered tunneling field-effect transistors (TE-TFET) as a high performance ultra-scaled steep transistor is proposed. This device exploits a specific property of 2D materials: layer thickness dependent energy bandgap (Eg).…
Comparators have multifarious applications in various fields, especially used in analog to digital converters. Over the years, we have seen many different designs of single stage, dynamic latch type and double tail type comparators based on…
Desirably, the world relies on the devices being compact, as they could drive to the increased functionality of integrated circuits at the provided footstep, that is becoming more reliable. To reduce the scalability over the devices,…
In recent part extensive simulation work has already been done on TFETs. However this is limited to device performance analysis. Evaluation of circuit performance is a topic that is very little touched. This is due to the non availability…
Estimating the effect of treatments from natural experiments, where treatments are pre-assigned, is an important and well-studied problem. We introduce a novel natural experiment dataset obtained from an early childhood literacy nonprofit.…
Tracking transforming objects holds significant importance in various fields due to the dynamic nature of many real-world scenarios. By enabling systems accurately represent transforming objects over time, tracking transforming objects…
Future experiments of nuclear and particle physics are moving towards the high luminosity regime, in order to access suppressed processes like rare B decays or exotic charmonium resonances. In this scenario, high rate capability is a key…
Accurate bandgap prediction is crucial for semiconductor applications, yet machine learning models trained on computational data often struggle to generalize to experimental bandgap measurements. Challenges related to data fidelity, domain…
We present the noise performance of High Electron Mobility Transistors (HEMT) developed by CNRS-C2N laboratory. Various HEMT's gate geometries with 2 pF to 230 pF input capacitance have been studied at 4 K. A model for both voltage and…
Atomic layers of black phosphorus (P) isolated from its layered bulk make a new two-dimensional (2D) semiconducting crystal with sizable direct bandgap, high carrier mobility, and promises for 2D electronics and optoelectronics. However,…