Related papers: How to Report and Benchmark Emerging Field-Effect …
Security and energy are considered as the most important parameters for designing and building a computing system nowadays. Today's attacks target different layers of the computing system (i.e. software and hardware). Introduction of new…
Since the creation of the Web, recommender systems (RSs) have been an indispensable mechanism in information filtering. State-of-the-art RSs primarily depend on categorical features, which ecoded by embedding vectors, resulting in…
The electron fluid model in plasmonic field effect transistor (FET) operation is related to the behavior of a radio-frequency (RF) cavity. This new understanding led to finding the relationships between physical device parameters and…
Two-dimensional crystals have emerged as a new class of materials with novel properties that may impact future technologies. Experimentally identifying and characterizing new functional two-dimensional materials in the vast material pool is…
The field of High-Performance Computing (HPC) is defined by providing computing devices with highest performance for a variety of demanding scientific users. The tight co-design relationship between HPC providers and users propels the field…
In this work we combine a Fin Field Effect Transistor (Fin-FET) characterised by a high height to width aspect ratio with high-k dielectric materials to study the optimized design for chemical-FETs to provide higher transconductance (and…
Impedance spectroscopy is vital for material characterization and assessing electrochemical device performance. It provides real-time analysis of dynamic processes such as electrode kinetics, electrons, holes or ion transport, and…
We explore the possibility to perform an in-situ transmission electron microscopy (TEM) thermoelectric characterization of materials. A differential heating element on a custom in-situ TEM microchip allows to generate a temperature gradient…
Feature matching is one of the most fundamental and active research areas in computer vision. A comprehensive evaluation of feature matchers is necessary, since it would advance both the development of this field and also high-level…
Graphene has attracted enormous interests due to its unique physical, mechanical, and electrical properties. Specially, graphene-based field-effect transistors (FETs) have evolved rapidly and are now considered as an option for conventional…
The technological development of increasingly larger quantum processors on different quantum platforms raises the problem of how to fairly compare their performance, known as quantum benchmarking of quantum processors. This is a challenge…
A chip to wafer scale, CMOS compatible method of graphene device fabrication has been established, which can be integrated into the back end of the line (BEOL) of conventional semiconductor process flows. In this paper, we present…
In this work, we present a parallel, fully-distributed finite element numerical framework to simulate the low-frequency electromagnetic response of superconducting devices, which allows to efficiently exploit HPC platforms. We select the…
Deepfake detection automatically recognizes the manipulated medias through the analysis of the difference between manipulated and non-altered videos. It is natural to ask which are the top performers among the existing deepfake detection…
One fundamental statistical question for research areas such as precision medicine and health disparity is about discovering effect modification of treatment or exposure by observed covariates. We propose a semiparametric framework for…
Effective methods for characterizing the noise in quantum computing devices are essential for programming and debugging circuit performance. Existing approaches vary in the information obtained as well as the amount of quantum and classical…
A field-effect transistor (FET) amplifier for small voltage signals is presented. Its design is elementary and the construction can be afforded by anyone. Despite its simplicity, with a voltage noise less than 1 nV/sqrt(Hz), it outperforms…
We present a scaling theory of two-dimensional (2D) field effect transistors (FETs). For devices with channel thickness less than 4 nm, the device electrostatics is dominated by the physical gate oxide thickness and not the effective oxide…
Charge-coupled device (CCD), along with the complementary metal-oxide-semiconductor (CMOS), is one of the major imaging technologies. Traditional CCDs rely on the charge transfer between potential wells, which gives them advantages of…
Compact interferometers, called phasemeters, make it possible to operate over a large range while ensuring a high resolution. Such performance is required for the stabilization of large instruments dedicated to experimental physics such as…