Related papers: How to Report and Benchmark Emerging Field-Effect …
In this study, we report the progress made towards the definition of a modular compact modeling technology for graphene field-effect transistors (GFET) that enables the electrical analysis of arbitrary GFET-based integrated circuits. A set…
FeFETs hold strong potential for advancing memory and logic technologies, but their inherent randomness arising from both operational cycling and fabrication variability poses significant challenges for accurate and reliable modeling.…
Edge computing is the next Internet frontier that will leverage computing resources located near users, sensors, and data stores to provide more responsive services. Therefore, it is envisioned that a large-scale, geographically dispersed,…
During the last years, Graphene based Field Effect Transistors (GFET) have shown outstanding RF performance; therefore, they have attracted considerable attention from the electronic devices and circuits communities. At the same time,…
Recent advancements in ultra-low-power machine learning (TinyML) hardware promises to unlock an entirely new class of smart applications. However, continued progress is limited by the lack of a widely accepted benchmark for these systems.…
The upcoming 6G technology is expected to operate in near-field (NF) radiating conditions thanks to high-frequency and electrically large antenna arrays. Although several studies have already addressed this possibility, it is worth noting…
The performance limits of the multilayer graphene nanoribbon (GNR) field-effect transistor (FET) are assessed and compared to those of monolayer GNR FET and carbon nanotube (CNT) FET. The results show that with a thin high-k gate insulator…
The inductance/impedance due to thin metallic structures in non-destructive testing (NDT) is difficult to evaluate. In particular, in Finite Element Method (FEM) eddy current simulation, an extremely fine mesh is required to accurately…
Efficient on-device neural network (NN) inference offers predictable latency, improved privacy and reliability, and lower operating costs for vendors than cloud-based inference. This has sparked recent development of microcontroller-scale…
Network embedding methods map a network's nodes to vectors in an embedding space, in such a way that these representations are useful for estimating some notion of similarity or proximity between pairs of nodes in the network. The quality…
Ten years have passed since the beginning of graphene research. In this period we have witnessed breakthroughs both in fundamental and applied research. However, the development of graphene devices for mass production has not yet reached…
Very deep submicron and nanometer technologies have increased notably integrated circuit (IC) sensitiveness to radiation. Soft errors are currently appearing into ICs working at earth surface. Hardened circuits are currently required in…
A small-signal equivalent circuit of 2D-material based field-effect transistors is presented. Charge conservation and non-reciprocal capacitances have been assumed so the model can be used to make reliable predictions at both device and…
Electrically conductive nanocomposites are an exciting ever expanding area of research that has yielded many new technologies for wearable health devices. Acting as strain sensing materials, they have paved the way towards real time medical…
Thin-film transistors (TFTs) represent a wide-spread tool to determine the charge-carrier mobility of materials. Mobilities and further transistor parameters like contact resistances are commonly extracted from the electrical…
The successful detection of biomolecules by a Field Effect Transistor-based biosensor (BioFET) is dictated by the sensor's intrinsic Signal-to-Noise Ratio (SNR). The detection limit of a traditional BioFET is fundamentally limited by…
How would you fairly evaluate two multi-object tracking algorithms (i.e. trackers), each one employing a different object detector? Detectors keep improving, thus trackers can make less effort to estimate object states over time. Is it then…
The charge doped into a semiconductor in a field effect transistor (FET) is generally confined to the interface of the semiconductor. A planar step at the interface causes a potential drop due to the strong electric field of the FET, which…
Semiconducting field emitters present some interesting features (e.g.; self-limited electron emission) for both scientific interest and industrial applications. The analysis of experimental results and device design has been restrained by…
A new DC thermal model of Carbon Nanotube Field Effect Transistors (CNTFETs) is proposed. The model is based on a number of fitting parameters depending on bias conditions by third order polynomials. The model includes three thermal…