Related papers: How to Report and Benchmark Emerging Field-Effect …
Electromechanics is the field of studying the interaction between microwave resonators and mechanical oscillators. It has been an interesting topic in the recent decade due to its numerous potential applications in science and technology,…
This work demonstrates a large area process for atomically thin 2D semiconductors to unlock the technological upscale required for their commercial uptake. The new atomic layer deposition (ALD) and conversion technique yields large area…
In this work, we investigate the transport phenomena in compound semiconductor material based buried channel Quantum Well MOSFET with a view to developing a simple and effective model for the device current. Device simulation has been…
Few-layer black phosphorus, a new elemental 2D material recently isolated by mechanical exfoliation, is a high-mobility layered semiconductor with a direct bandgap that is predicted to strongly depend on the number of layers, from 0.35 eV…
The GEneral description of Fission observables (GEF) model was developed to produce fission related nuclear data which are of crucial importance for basic and applied nuclear physics. The investigation of the performance of the GEF code is…
Strong-field quantum electronics is emerging as a potential candidate in information processing but still coherence vs decoherence is a primary concern of the concept. Strong-field coherent processes in band gap materials have led during…
A crucial limit to measurement efficiencies of superconducting circuits comes from losses involved when coupling to an external quantum amplifier. Here, we realize a device circumventing this problem by directly embedding a two-level…
As semiconductor devices scale to new dimensions, the materials and designs become more dependent on atomic details. NEMO5 is a nanoelectronics modeling package designed for comprehending the critical multi-scale, multi-physics phenomena…
Monolayer WSe2 is a two dimensional (2D) semiconductor with a direct bandgap, and it has been recently explored as a promising material for electronics and optoelectronics. Low field effect mobility is the main constraint preventing WSe2…
The measurable properties of the artifacts or objects in the computer, management, or finance disciplines are extrinsic, not inherent -- dependent on their problem definitions and solution instantiations. Only after the instantiation can…
A new compact modeling approach is presented which describes the full current-voltage (I-V) characteristic of high-performance (aggressively scaled-down) tunneling field-effect-transistors (TFETs) based on homojunction direct-bandgap…
Estimating heterogeneous treatment effects with machine learning has attracted substantial attention in both academic research and industrial practice. However, the two communities often evaluate models under markedly different conditions.…
Dielectric metasurfaces have introduced a new paradigm for substance detection by exploiting their resonant properties to enhance light-matter interaction. This enhancement can be used for sensing either through refractive index changes or…
We report on fabrication of novel field-effect transistors (FETs) based on transition metal dichalcogenides. The unique structure of single crystals of these layered inorganic semiconductors enables fabrication of FETs with intrinsically…
Extended Floating Gate Field Effect Transistors (EGFETs) are CMOS-compatible floating gate devices capable of detecting charges on their sensing area by the relative shifts in current-voltage (I-V) characteristics. The I-V shifts are…
Two-dimensional materials-based field-effect transistors (2DM-FETs) exhibit both ambipolar and unipolar transport types. To physically and compactly cover both cases, we put forward a quasi-Fermi-level phase space (QFLPS) approach to model…
Graphene field-effect transistors (GFETs) are experimental devices which are increasingly seeing commercial and research applications. Simulation and modelling forms an important stage in facilitating this transition, however the majority…
Graphene-based devices are planned to augment the functionality of Si and III-V based technology in radio-frequency (RF) electronics. The expectations in designing graphene {field-effect} transistors (GFETs) with enhanced RF performance…
Transferability estimation metrics are used to find a high-performing pre-trained model for a given target task without fine-tuning models and without access to the source dataset. Despite the growing interest in developing such metrics,…
This paper surveys benchmarking principles, machine learning devices including GPUs, FPGAs, and ASICs, and deep learning software frameworks. It also reviews these technologies with respect to benchmarking from the perspectives of a…