Related papers: Datta-Das transistor for atomtronic circuits using…
We examine transport through a quantum dot coupled to three ferromagnetic leads in the regime of weak tunnel coupling. A finite source-drain voltage generates a nonequilibrium spin on the otherwise non-magnetic quantum dot. This spin…
Controlling the flow of electrons by manipulation of their spin is a key to the development of spin-based electronics. While recent demonstrations of electrical-gate control in spin-transistor configurations show great promise, operation at…
Spin-based memories are attractive for their non-volatility and high durability but provide modest resistance changes, whereas semiconductor logic transistors are capable of large resistance changes, but lack memory function with high…
We propose and numerically simulate novel reconfigurable logic gates employing spin metal-oxide-semiconductor field-effect transistors (spin MOSFETs). The output characteristics of the spin MOSFETs depend on the relative magnetization…
An AC electric field applied to a donor-bound electron in a semiconductor modulates the orbital character of its wave function, which affects the electron's spin dynamics via the spin-orbit interaction. Numerical calculations of the spin…
We analyze spin-dependent transport through spin valves composed of an interacting quantum dot coupled to two ferromagnetic leads. The spin on the quantum dot and the linear conductance as a function of the relative angle $\theta$ of the…
In this paper, we discuss spin transport in topological insulator (TI) and diluted magnetic semiconductor (DMS) heterogeneous structures. In DMS / FM (Ferromagnetic Metal) heterogeneous structure, the spin injection efficiency changes…
Recently, in addition to the well-known resistor, capacitor and inductor, a fourth passive circuit element, named memristor, has been identified following theoretical predictions. The model example used in such case consisted in a nanoscale…
The theoretical description has been proposed for the operation of the spin transistor in the gate-controlled InAs nanowire. The calculated current-voltage characteristics show that the current flowing from the source (spin injector) to the…
A numerical simulation of spin-dependent quantum transport for a spin field effect transistor (spinFET) is implemented in a widely used simulator nanoMOS. This method includes the effect of both spin relaxation in the channel and the…
We propose and investigate a spin transistor device consisting of two ferromagnetic leads connected by a two-dimensional topological insulator as the channel material. It exploits the unique features of the topological spin-helical edge…
Spin-orbit interaction (SOI) has been a key tool to steer and manipulate spin-dependent transport properties in two-dimensional electron gases. Here we demonstrate how spin currents can be created and efficiently read out in nano- or…
We design spin filters for particles with potentially arbitrary spin S (= 1/2, 1, 3/2,....) using a one-dimensional periodic chain of magnetic atoms as a quantum device. Describing the system within a tight-binding formalism we present an…
Silicon quantum dots are considered an excellent platform for spin qubits, partly due to their weak spin-orbit interaction. However, the sharp interfaces in the heterostructures induce a small but significant spin-orbit interaction which…
The control of intrinsic magnetic degrees of freedom is very important as it offers a practical means to manipulate and probe electron spin transport. Tunable spin-orbit effect in quantum wires can in principle serve as a means to achieve…
Quantum spin liquid states, in which spins are quantum-mechanically delocalized in direction, have been so far studied for charge-localized Mott insulators arising from strong repulsive interaction. Recently, however, it was found that the…
Based on Green's function formalism, the existence of multiple mobility edges in a one-dimensional magnetic-non-magnetic superlattice geometry in presence of external electric field is predicted, and, it leads to the possibility of getting…
We develop a theory for spin transport and magnetization dynamics in a quantum-dot spin valve, i.e., two magnetic reservoirs coupled to a quantum dot. Our theory is able to take into account effects of strong correlations. We demonstrate…
The gate-controlled electron spin interference was observed in nanolithographically defined square loop (SL) arrays fabricated using In$_{0.52}$Al$_{0.48}$As/In$_{0.53}$Ga$_{0.47}$As/In$_{0.52}$Al$_{0.48}$As quantum wells. In this…
We theoretically propose a novel spin-dependent electronic transport mechanism in which the spin-unpolarized electron beam is split into different directions depending on spins at an atomic domain boundary in non-magnetic material.…