An AC electric field applied to a donor-bound electron in a semiconductor modulates the orbital character of its wave function, which affects the electron's spin dynamics via the spin-orbit interaction. Numerical calculations of the spin dynamics of a hydrogenic donor (Si) embedded in GaAs, using a real-space multi-band k.p formalism, show the high symmetry of the hydrogenic donor state results in strongly nonlinear dependences of the electronic g tensor on applied fields. A nontrivial consequence is that the most rapid Rabi oscillations occur for electric fields modulated at a subharmonic of the Larmor frequency.
@article{arxiv.0808.0208,
title = {Electric-field control of a hydrogenic donor's spin in a semiconductor},
author = {A. De and Craig E. Pryor and Michael E. Flatté},
journal= {arXiv preprint arXiv:0808.0208},
year = {2013}
}