Related papers: Datta-Das transistor for atomtronic circuits using…
We study spin polarization in a split-gate quantum wire focussing on the effect of a realistic smooth potential due to remote donors. Electron interaction and spin effects are included within the density functional theory in the local spin…
Ultracold atoms confined to periodic potentials have proven to be a powerful tool for quantum simulation of complex many-body systems. We confine fermions to one-dimension to realize the Tomonaga-Luttinger liquid model describing the highly…
Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role. In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are based…
We demonstrate theoretically all-electric control of the superconducting transition temperature using a device comprised of a conventional superconductor, a ferromagnetic insulator, and semiconducting layers with intrinsic spin-orbit…
Fundamental physical properties limiting the performance of spin field effect transistors are compared to those of ordinary (charge-based) field effect transistors. Instead of raising and lowering a barrier to current flow these spin…
We employ optical pump-probe spectroscopy to investigate the voltage dependence of spontaneous electron and nuclear spin polarizations in hybrid MnAs/n-GaAs and Fe/n-GaAs Schottky diodes. Through the hyperfine interaction, nuclear spin…
Spintronics devices rely on spin-dependent transport behavior evoked by the presence of spin-polarized electrons. Transport through nanostructures, on the other hand, is dominated by strong Coulomb interaction. We study a model system in…
We present the first spintronic semiconductor field effect transistor. The injector and collector contacts of this device were made from magnetic permalloy thin films with different coercive fields so that they could be magnetized either…
A proposal of electrically controlled spin transistor in helical magnetic field is presented. In the proposed device, the transistor action is driven by the Landau-Zener transitions that lead to a backscattering of spin polarized electrons…
We present a proposal for a fully electrically controllable quantum dot based spin current injector. The device consists of a quantum dot that is strongly coupled to a ferromagnetic electrode on one side and weakly coupled to a nonmagnetic…
The absorption of traveling photons resonant with electric dipole transitions of an atomic gas naturally leads to electric dipole spin wave excitations. For a number of applications, it would be highly desirable to shape and coherently…
Nuclear spins of dopant atoms in semiconductors are promising candidates as quantum bits, due to the long lifetime of their quantum states. Conventionally, coherent control of nuclear spins is done using ac magnetic fields. Using the…
We integrate ambipolar quantum dots in silicon fin field-effect transistors using exclusively standard complementary metal-oxide-semiconductor fabrication techniques. We realize ambipolarity by replacing conventional highly-doped source and…
We use an aluminium single electron transistor with a magnetic gate to directly quantify the chemical potential anisotropy of GaMnAs materials. Uniaxial and cubic contributions to the chemical potential anisotropy are determined from field…
An alternating electric field, applied to a quantum dot, couples to the electron spin via the spin-orbit interaction. We analyze different types of spin-orbit coupling known in the literature and find two efficient mechanisms of spin…
We propose and analyze a four-terminal metal-semiconductor device that uses hot-electron transport through thin ferromagnetic films to inject and detect a charge-coupled spin current transported through the conduction band of an arbitrary…
In ferromagnet/heavy metal bilayers, an in-plane current gives rise to spin-orbit spin transfer torque which is usually decomposed into field-like and damping-like torques. For two-dimensional free-electron and tight-binding models with…
Electrons in tight-binding lattice driven by DC electric field dissipate their energy through on-site fermionic thermostats. Due to the translational invariance in the transport direction, the problem can be block-diagonalized. We solve…
Electron spin qubits in silicon, whether in quantum dots or in donor atoms, have long been considered attractive qubits for the implementation of a quantum computer due to the semiconductor vacuum character of silicon and its compatibility…
A spin metal-oxide-semiconductor field-effect-transistor (spin MOSFET), which combines a Schottky-barrier MOSFET with ferromagnetic source and drain contacts, is a promising device for spintronic logic. Previous simulation studies predict…