Related papers: Datta-Das transistor for atomtronic circuits using…
Current interest in spintronics is largely motivated by a belief that spin based devices (e.g. spin field effect transistors) will be faster and consume less power than their electronic counterparts. Here we show that this is generally…
In many systems, planar Hall effect wherein transverse signal appears in response to longitudinal stimulus is rooted in spin-orbit coupling. A spin transistor put forward by Datta and Das on the other hand consists of ferromagnetic leads…
A recently published report in the journal Science claims that the Datta-Das Spin Field Effect Transistor has been demonstrated because an exact agreement was found between the voltage modulation in a fabricated structure and a theoretical…
A Datta-Das spin field effect transistor is built of a one-dimensional weak link, with Rashba spin orbit interactions (SOI), which connects two magnetized reservoirs. The particle and spin currents between the two reservoirs are calculated…
The problem of spin-dependent transport of electrons through a finite array of quantum dots attached to 1D quantum wire (spin gun) for various semiconductor materials is studied. The Breit-Fermi term for spin-spin interaction in the…
We analyze spin-transport in semiconductors in the regime characterized by $T\stackrel{<}{\sim}T_F$ (intermediate to degenerate), where $T_F$ is the Fermi temperature. Such a regime is of great importance since it includes the lightly doped…
Spin field effect transistors (SpinFET) are an iconic class of spintronic devices that exploit gate tuned spin-orbit interaction in semiconductor channels interposed between ferromagnetic source and drain contacts to elicit transistor…
We propose the scheme of a novel spin-optronic device, optical analog of Datta and Das spin transistor for the electrons. The role of the ferromagnetic-nonmagnetic contact is played by a spatially confined cavity polariton BEC. The…
Transistors are key elements for enabling computational hardware in both classical and quantum domains. Here, we propose a voltage-gated spin transistor using itinerant electrons in the Hubbard model which acts at the level of single…
In this work we investigate spin diffusion in InAs quantum wells with the Rashba spin-orbit coupling modulated by a gate voltage. The gate voltage dependence of the spin diffusion under different temperatures is studied with all the…
We introduce a spin-orbit coupling scheme, where a retro-reflected laser beam selectively diffracts two spin components in opposite directions. Spin sensitivity is provided by sweeping through a magnetic-field sensitive transition while…
Electrically controlled rotation of spins in a semiconducting channel is a prerequisite for the successful realization of many spintronic devices, like, e.g., the spin field effect transistor (sFET). To date, there have been only a few…
We investigate theoretically the efficiency of the Rashba effect, i.e. the spin splitting resulting from an electric field. This is the mechanism behind the Datta-Das spin transistor. In the research efforts so far the carriers have usually…
Due to the spin-orbital coupling in a semiconductor quantum dot, a freely precessing electron spin produces a time-dependent charge density. This creates a sizeable electric field outside the dot, leading to promising applications in…
We propose and theoretically analyze a novel metal-oxide-semiconductor field-effect-transistor (MOSFET) type of spin transistor (hereafter referred to as a spin MOSFET) consisting of a MOS gate structure and half-metallic-ferromagnet (HMF)…
A large spin-dependent and electric field-tunable magnetoresistance of a two-dimensional electron system (2DES) is a key ingredient for the realization of many novel concepts for spin-based electronic devices. The low magnetoresistance…
We suggest a simple experimental method for probing antiferromagnetic spin correlations of two-component Fermi gases in optical lattices. The method relies on a spin selective Raman transition to excite atoms of one spin species to their…
Motivated by the recent experimental realization of synthetic gauge fields in ultracold atoms, we investigate one-dimensional attractive Fermi gases with a time-dependent gauge flux on the spin sector. By combining the methods of the Bethe…
A collection of trapped atomic ions represents one of the most attractive platforms for the quantum simulation of interacting spin networks and quantum magnetism. Spin-dependent optical dipole forces applied to an ion crystal create…
A spin transport model is employed to study the effects of spin dephasing induced by diffusion-driven transit-time uncertainty through semiconductor spintronic devices where drift is the dominant transport mechanism. It is found that in the…