Related papers: Gallium nitride phononic integrated circuits for f…
GaN/InGaN microLEDs are a very promising technology for next generation displays. Switching control transistors and their integration are key components in achieving high-performance, efficient displays. Monolithic integration of microLEDs…
We propose and demonstrate a hybrid waveguide platform using layered amorphous silicon and silicon nitride. The waveguide offers more degrees of freedom to design waveguides with desired confinement, effective index and polarization…
In the race towards "beyond 6G" telecommunication platforms, magnonics emerges as a promising solution due to its wide tunability within the FR3 band (7-24 GHz). So far, however, the need for an external magnetic bias field to allow the…
Silicon nitride (SiN) has emerged as a promising platform for integrated nonlinear photonics because of its low propagation loss, wide transparency window, and CMOS compatibility. Nonlinear processes arising from photon-electron…
In the rapidly evolving area of integrated photonics, there is a growing need for materials that satisfy the particular requirements of increasingly complex and specialized devices and applications. Present photonic material platforms have…
In this paper, a silicon rich nitride-lithium niobate on insulator (SRN-LNOI) hybrid platform with waveguides and several key components is proposed. The propagation loss of the silicon rich nitride-lithium niobate rib-loaded waveguide (1…
Heterogeneous integration of gain and strongly nonlinear materials with ultra-low-loss silicon nitride (SiN) photonics offers a route to scalable quantum circuits, but concurrent wafer-scale manufacturability, low interlayer loss, and high…
This study demonstrates 3D monolithic integration of amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) on Gallium Nitride (GaN) high electron mobility transistors (HEMTs) in a cascode configuration, achieving high…
The scattering of lattice excitations (phonons) with the photoexcited charge carriers is of a major concern in optoelectronic devices. Here, the resonant Raman scattering will be utilized to study an exciton-phonon interaction in GaN…
Tunable, low-loss, narrowband, and frequency-stabilized filters play a critical role in the realization of transceivers for efficient signal processing in telecommunications and sensing applications in the presence of strong interference…
Millimeter-wave (mmWave,>30 GHz) radars are the key enabler in the coming 6G era for high-resolution sensing and detection of targets. Photonic radar provides an effective approach to overcome the limitations of electronic radars thanks to…
Silicon nitride (SiN) waveguides with ultra-low optical loss enable integrated photonic applications including low noise, narrow linewidth lasers, chip-scale nonlinear photonics, and microwave photonics. Lasers are key components to SiN…
Bulk Acoustic Wave (BAW) filters find applications in radio frequency (RF) communication systems for Wi-Fi, 3G, 4G, and 5G networks. In the beyond-5G (potential 6G) era, high frequency bands (>8 GHz) are expected to require resonators with…
Ultra-low noise lasers are essential tools in a wide variety of applications, including data communication, light detection and ranging (LiDAR), quantum computing and sensing, and optical metrology. Recent advances in integrated photonics,…
High-efficient heat dissipation plays critical role for high-power-density electronics. Experimental synthesis of ultrahigh thermal conductivity boron arsenide (BAs, 1300 W m-1K-1) cooling substrates into the wide-bandgap semiconductor of…
Silicon-based integrated photonics has demonstrated significant advances in miniaturization and performance, yet critical challenges remain in achieving efficient on-chip communication at high bandwidths. Plasmonic devices on silicon and…
Validating material performance in electrical devices is crucial to product development. For Gallium Nitride (GaN) devices, evaluating material factors such as defects, dopant concentration, and overall production quality is essential to…
Aluminum scandium nitride (AlScN) is a promising barrier material for gallium nitride (GaN)-based transistors for the next generation of radio-frequency electronic devices. In this work, we examine the transport properties of two…
We present a platform based upon silicon nitride nanomembranes for integrating superconducting microwave circuits with planar acoustic and optical devices such as phononic and photonic crystals. Utilizing tensile stress and lithographic…
One of the major challenges in communication, radar, and electronic warfare receivers arises from nearby device interference. The paper presents a 2-6 GHz GaN LNA front-end with onboard sensing, processing, and feedback utilizing…