Related papers: Gallium nitride phononic integrated circuits for f…
Hybrid silicon nanowires with an integrated light-emitting segment can significantly advance nanoelectronics and nanophotonics. They would combine transport and optical characteristics in a nanoscale device, which can operate in the…
Nitride semiconductors are ubiquitous in optoelectronic devices such as LEDs and Blu-Ray optical disks. A major limitation for further adoption of GaN in power electronics is its low hole mobility. In order to address this challenge, here…
Light emitting diodes (LEDs) based on Gallium Nitride (GaN) have been revolutionizing various applications in lighting, displays, medical equipment, and other fields. However, their energy efficiency is still below expectations in many…
Photonic integrated circuits (PICs) have been acknowledged as the promising platforms for the applications in data communication, Lidar in autonomous driving vehicles, innovative sensor technology, etc. Since the demonstration of optical…
Data rates and volume for mobile communication are ever-increasing with the growing number of users and connected devices. With the deployment of 5G and 6G on the horizon, wireless communication is advancing to higher frequencies and larger…
Wireless communication through dynamic spectrum allocation over microwave bands, essential to accommodate exponentially growing data traffic, requires massive array of radio-frequency (RF) filters for adaptive signal shaping at arbitrary…
Gallium nitride (GaN) is a wide-bandgap semiconductor of significant interest for applications in solid-state lighting, power electronics, and radio-frequency amplifiers. An important limitation of this semiconductor is its low intrinsic…
Nonlinear optics in photonic integrated circuits is usually limited to utilizing the nonlinearity of a single material. In this work, we demonstrate the use of hybrid optical nonlinearities that occur in two different materials. This…
Semiconductor heterojunctions are foundational to many advanced electronic and optoelectronic devices. However, achieving high-quality, lattice-mismatched interfaces remains challenging, limiting both scalability and device performance.…
Aluminum nitride and silicon nitride have recently emerged as important nonlinear optical materials in integrated photonics respectively for their quadratic and cubic optical nonlinearity. A composite aluminum nitride and silicon nitride…
In this work, we report the use of commercial Gallium Nitride (GaN) power electronics to precisely switch complex distributed loads, such as electron lenses and deflectors, without impedance matching. Depending on the chosen GaN field…
In the past few years, we have witnessed an increased interest in the use of 2D materials for the realization of hybrid photonic nonlinear waveguides. Although graphene has attracted most of the attention, other families of 2D materials…
Gallium nitride (GaN) is a typical wide-bandgap semiconductor with a critical role in a wide range of electronic applications. Ballistic thermal transport at nanoscale hotspots will greatly reduce the performance of a device when its…
Meeting the ever increasing demand for transmission capacity in wireless networks will require evolving towards higher regions in the radiofrequency spectrum, reducing cell sizes as well as resorting to more compact, agile and power…
The forthcoming sixth-generation (6G) and beyond (XG) wireless networks are poised to operate across an expansive frequency range from microwave, millimeter-wave to terahertz bands to support ubiquitous connectivity in diverse application…
Enhanced supercontinuum generation (SCG) is experimentally demonstrated in integrated silicon nitride (Si3N4) waveguides incorporating highly nonlinear graphene oxide (GO) in the form of two dimensional (2D) films. Onchip integration of the…
Among the wide-bandgap compound semiconductors, gallium nitride is the most widely available material due to its prevalence in the solid state lighting and high-speed/high-power electronics industries. It is now known that GaN is one of…
A GaN resonant cavity light emitting diode was built on a GaN-AlN distributed Bragg reflector grown on a silicon substrate. The electroluminescence output increased by 2.5 times for a GaN diode coupled to a properly designed resonant…
We report on the deposition of gallium oxide using microwave irradiation technique on III nitride epi layers. We also report on the first demonstration of a gallium oxide device, a visible blind deep UV detector, with GaN based…
Integrated photonics has enabled signal synthesis, modulation and conversion using photonic integrated circuits (PIC). Many materials have been developed, among which silicon nitride (Si$_3$N$_4$) has emerged as a leading platform…