Related papers: Gallium nitride phononic integrated circuits for f…
In order to overcome the challenge of obtaining high modulation depth due to weak graphene-light interaction, a graphene-on-silicon nitride (SiNx) microring resonator based on graphene's gate-tunable optical conductivity is proposed and…
Silicon photonics promises to address the challenges for next-generation short-reach optical interconnects. Growing bandwidth demand in hyper-scale data centers and high-performance computing motivates the development of faster and…
In this work, we report the realization of a polarization-insensitive grating coupler, single-mode waveguide, and ring resonator in the GaN-on-Sapphire platform. We provide a detailed demonstration of the material characterization, device…
Aluminum nitride (AlN)-on-insulator has emerged as a promising platform for the realization of linear and non-linear integrated photonic circuits. In order to efficiently route optical signals on-chip, precise control over the interaction…
High stress stoichiometric silicon nitride resonators, whose quality factors exceed one million, have shown promise for applications in sensing and signal processing. Yet, electrical integration of the insulating silicon nitride resonators…
On-chip integration of two-dimensional (2D) materials offers great potential for the realization of novel optoelectronic devices in different photonic platforms. In particular, indium selenide (InSe) is a very promising 2D material due to…
High quality factor mechanical resonators have shown great promise in developing classical or quantum technologies. Simultaneously, progress has been made in developing controlled mechanical nonlinearity. Here we combine these two…
Ternary compounds obtained by alloying wurtzite AlN with transition metals have emerged as promising materials with significantly enhanced piezoelectric characteristics relative to binary AlN. The increased electromechanical coupling in…
Fully CMOS-compatible photonic memory holding devices hold a potential in a development of ultrafast artificial neural networks. Leveraging the benefits of photonics such as high-bandwidth, low latencies, low-energy interconnect and high…
This work reports on the modeling, fabrication, and experimental characterization of a 13 GHz 30% Scandium-doped Aluminum Nitride (ScAlN) Overmoded Bulk Acoustic Resonator (OBAR) for high-frequency Radio Frequency (RF) applications, notably…
Doped graphene emerges as a strong contender for active plasmonic material in the mid-infrared wavelengths due to the versatile external-control of its permittivity-function and also its highly-compressed graphene surface plasmon (GSP)…
Aluminum nitride (AlN) is an emerging material for integrated quantum photonics due to its large $\chi^{(2)}$ nonlinearity. Here we demonstrate the hybrid integration of AlN on silicon nitride (SiN) photonic chips. Composite microrings are…
Integrated photonics has profoundly impacted a wide range of technologies underpinning modern society. The ability to fabricate a complete optical system on a chip offers unrivalled scalability, weight, cost and power efficiency. Over the…
We propose and experimentally demonstrate a photonic routing architecture that can efficiently utilize the space of multi-plane (3D) photonic integration. A wafer with three planes of amorphous silicon waveguides was fabricated and…
Optical isolators and circulators are indispensable for photonic integrated circuits (PICs). Despite of significant progress in silicon-on-insulator (SOI) platforms, integrated optical isolators and circulators have been rarely reported on…
Integrating graphene with plasmonic nanostructures results in multifunctional hybrid systems with enhanced performance for numerous applications. In this work, we take advantage of the remarkable mechanical properties of graphene to combine…
The realization of ultra-compact passive silicon photonic devices is becoming more and more important for the future large-scale photonic integration as desired for many systems. Although some compact silicon photonic devices have been…
We have designed and fabricated a shallow-etched grating on gallium arsenide nanomembranes for efficient chip-to-fiber coupling in quantum photonic integrated circuits. Experimental results show that the grating provides a fiber-coupling…
Scaling wide-band-gap semiconductors to the ultrathin limit offers a transformative pathway for power electronics, with gallium nitride (GaN) representing a cornerstone material in this class. However, the operational resilience and…
This study explores the potential of a novel material platform combining Gallium Selenide (GaSe) with a \b{eta}-Ga2O3 substrate and Al2O3 cladding for advanced photonic waveguides. The numerical investigation of the optical performance of…