Related papers: Gallium nitride phononic integrated circuits for f…
We present the design, simulation and optimization of a graphene-on-silicon nitride (GOSiN) integrated waveguide dual-mode electro-absorption modulator operating with a speed between 27-109 GHz and an energy consumption below 6 pJ/bit. This…
Silicon photonics has thrived in telecommunications over recent decades, and its extension to the mid-infrared range has the potential to unlock valuable opportunities for sensing, imaging, and free-space communications. With this…
We investigate theoretically photonic chips with monolithically integrated blue light sources. According to our evaluations, a group-III nitride light emitting heterostructure can be efficiently combined with silicon nitride waveguiding…
We present the design, fabrication, and measurement of a monolithically integrated optical receiver analog front end, where low power operation is a primary consideration with a goal of supporting 56 Gbaud intensity modulated direct detect…
Two-dimensional gallium nitride (2D-GaN) has great potential in power electronics and optoelectronics. Heat dissipation is a critical issue for these applications of 2D-GaN. Previous studies showed that higher-order phonon-phonon scattering…
Nonlinear interactions between ultrashort optical waveforms and solids can be used to induce and steer electric current on a femtosecond (fs) timescale, holding promise for electronic signal processing at PHz frequencies [Nature 493, 70…
With the increasing need for large volumes of data processing, transport, and storage, optimizing the trade-off between high-speed and energy consumption in today's optoelectronic devices is getting increasingly difficult. Heterogeneous…
Aluminum gallium arsenide (AlGaAs) and related III-V semiconductors have excellent optoelectronic properties. They also possess strong material nonlinearity as well as high refractive indices. In view of these properties, AlGaAs is a…
Gallium Arsenide and related compound semiconductors lie at the heart of optoelectronics and integrated laser technologies. Shaped at the micro and nano-scale, they allow strong interaction with quantum dots and quantum wells, and promise…
We design, fabricate and characterize integrated photonic routing manifolds with 10 inputs and 100 outputs using two vertically integrated planes of silicon nitride waveguides. We analyze manifolds via top-view camera imaging. This…
Heterogeneous and monolithic integration of the versatile low loss silicon nitride platform with low temperature materials such as silicon electronics and photonics, III-V compound semiconductors, lithium niobate, organics, and glasses, has…
The compound semiconductor gallium arsenide (GaAs) provides an ultra-clean platform for storing and manipulating quantum information, encoded in the charge or spin states of electrons confined in nanostructures. The absence of inversion…
Integrated photonic devices made of silicon nitride (SiN), which can be integrated with silicon-on-insulator and III-V platforms, are expected to drive the expansion of silicon photonics technology. However, the relatively low refractive…
We experimentally demonstrate waveguide and microring resonator (MRR) polarizers by integrating 2D graphene oxide (GO) films onto silicon (Si) photonic devices. The 2D GO films with highly anisotropic light absorption are on-chip integrated…
Frequency-agile lasers operating in the ultraviolet-to-blue spectral range (360-480 nm) are critical enablers for a wide range of technologies, including free-space and underwater optical communications, optical atomic clocks, and…
Silicon nitride (SiN) photonics platform has attributes of ultra-low linear and nonlinear propagation losses and CMOS-compatible fabrication process, promising large-scale multifunctional photonic circuits. However, the centrosymmetric…
The combination of nonlinear and integrated photonics has recently seen a surge with Kerr frequency comb generation in micro-resonators as the most significant achievement. Efficient nonlinear photonic chips have myriad applications…
Large-scale entanglement of nitrogen-vacancy (NV) centers in diamond will require integration of NV centers with optical networks. Toward this goal, we present the fabrication of single-crystalline gallium phosphide (GaP)…
This review explores the development of spin-wave technology, highlighting magnonics as a promising route for radio frequency (RF) communication systems. The rollout of 5G and the upcoming 6G networks intensifies the demand for devices that…
Microscale resonators are fundamental and necessary building blocks for modern radio communication filters for mobile devices. The resonator's Q factor ($Q$) determines the insertion loss while coupling ($K_t^2$) governs the fractional…