English

Quantum Electromechanics on Silicon Nitride Nanomembranes

Mesoscale and Nanoscale Physics 2016-08-24 v2 Quantum Physics

Abstract

We present a platform based upon silicon nitride nanomembranes for integrating superconducting microwave circuits with planar acoustic and optical devices such as phononic and photonic crystals. Utilizing tensile stress and lithographic patterning of a silicon nitride nanomembrane we are able to reliably realize planar capacitors with vacuum gap sizes down to s80s \approx 80nm. In combination with spiral inductor coils of micron pitch, this yields microwave (8\approx 8GHz) resonant circuits of high impedance (Z03.4Z_{0} \approx 3.4kΩ\Omega) suitable for efficient electromechanical coupling to nanoscale acoustic structures. We measure an electromechanical vacuum coupling rate of g0/2π=41.5g_{0}/2\pi = 41.5~Hz to the low frequency (4.484.48MHz) global beam motion of a patterned phononic crystal nanobeam, and through parametric microwave driving reach a backaction cooled mechanical mode occupancy as low as nm=0.58n_{m} = 0.58.

Keywords

Cite

@article{arxiv.1512.04660,
  title  = {Quantum Electromechanics on Silicon Nitride Nanomembranes},
  author = {Johannes M. Fink and Mahmoud Kalaee and Alessandro Pitanti and Richard Norte and Lukas Heinzle and Marcelo Davanco and Kartik Srinivasan and Oskar Painter},
  journal= {arXiv preprint arXiv:1512.04660},
  year   = {2016}
}

Comments

21 pages, 9 figures

R2 v1 2026-06-22T12:09:56.509Z