We present a platform based upon silicon nitride nanomembranes for integrating superconducting microwave circuits with planar acoustic and optical devices such as phononic and photonic crystals. Utilizing tensile stress and lithographic patterning of a silicon nitride nanomembrane we are able to reliably realize planar capacitors with vacuum gap sizes down to s≈80nm. In combination with spiral inductor coils of micron pitch, this yields microwave (≈8GHz) resonant circuits of high impedance (Z0≈3.4kΩ) suitable for efficient electromechanical coupling to nanoscale acoustic structures. We measure an electromechanical vacuum coupling rate of g0/2π=41.5~Hz to the low frequency (4.48MHz) global beam motion of a patterned phononic crystal nanobeam, and through parametric microwave driving reach a backaction cooled mechanical mode occupancy as low as nm=0.58.
@article{arxiv.1512.04660,
title = {Quantum Electromechanics on Silicon Nitride Nanomembranes},
author = {Johannes M. Fink and Mahmoud Kalaee and Alessandro Pitanti and Richard Norte and Lukas Heinzle and Marcelo Davanco and Kartik Srinivasan and Oskar Painter},
journal= {arXiv preprint arXiv:1512.04660},
year = {2016}
}