Self Biased Integrated Magnonic Device
Abstract
In the race towards "beyond 6G" telecommunication platforms, magnonics emerges as a promising solution due to its wide tunability within the FR3 band (7-24 GHz). So far, however, the need for an external magnetic bias field to allow the coherent excitation of spin waves has been a major bottleneck. Conventional bulky electromagnets are power-intensive and challenging to integrate on-chip, restricting magnonic applications largely to academic research. Here, we present the first demonstration of a standalone, tunable magnonic device featuring all-electric input and output, fully integrated on a silicon substrate with a compact footprint of 100 x 150 m. The device consists of a CoFeB waveguide equipped with two radio frequency antennas, flanked by a symmetric configuration of T-shaped magnetic flux concentrators and rectangular SmCo permanent micromagnets. By varying the distance D between the flux concentrators and the permanent magnets from 0 to 12 m, the transverse bias field can be tuned from 20.5 mT to 11 mT, respectively. This variation directly modulates the dispersion relation of Damon-Eshbach spin wave modes in the CoFeB waveguide. In these proof-of-concept devices, the spin wave frequency band ranges from 3 to 8 GHz, with precise phase shift tuning of up to 120 degrees at 6 GHz achieved by varying D within the 0-8 m range. The operational frequency band could even be pushed to higher frequencies through optimized micromagnet engineering.
Cite
@article{arxiv.2502.03186,
title = {Self Biased Integrated Magnonic Device},
author = {Maria Cocconcelli and Federico Maspero and Andrea Micelli and Alberto Toniato and Andrea Del Giacco and Nicola Pellizzi and Alejandro Enrique Plaza and Andrea Cattoni and Marco Madami and Raffaele Silvani and Abbass Hamadeh and Christoph Adelmann and Philipp Pirro and Silvia Tacchi and Florin Ciubotaru and Riccardo Bertacco},
journal= {arXiv preprint arXiv:2502.03186},
year = {2025}
}