Related papers: Characterisation of analogue front end and time wa…

Edge-TCT and charge collection measurements with passive test structures made in LFoundry 150 nm CMOS process on p-type substrate with initial resistivity of over 3 k$\Omega$cm are presented. Measurements were made before and after…

The CMS Inner Tracker, made of silicon pixel modules, will be entirely replaced prior to the start of the High Luminosity LHC period. One of the crucial components of the new Inner Tracker system is the readout chip, being developed by the…

We present the characterization of a readout Application-Specific Integrated Circuit (ASIC) for the CMS Endcap Timing Layer (ETL) of the High-Luminosity LHC upgrade with charge injection. The ASIC, named ETROC and developed in a 65 nm CMOS…

In the last years, high-resolution time tagging has emerged as the tool to tackle the problem of high-track density in the detectors of the next generation of experiments at particle colliders. Time resolutions below 50ps and event average…

We present the design and characterization of the first full chain precision timing prototype ASIC, named ETL Readout Chip version 1 (ETROC1) for the CMS MTD endcap timing layer (ETL) upgrade. The ETL utilizes Low Gain Avalanche Diode…

Charge collection properties of depleted CMOS pixel detector prototypes produced on p-type substrate of 2 k$\Omega$cm initial resistivity (by LFoundry 150 nm process) were studied using Edge-TCT method before and after neutron irradiation.…

Results in this paper present an in-depth study of time resolution for active pixels of the RD50-MPW2 prototype CMOS particle detector. Measurement techniques employed include Backside- and Edge-TCT configurations, in addition to electrons…

A method is presented which allows to obtain the position-dependent electric field and charge density by fits to velocity profiles from edge-TCT data from silicon strip-detectors. The validity and the limitations of the method are…

Analogue test structures were fabricated using the Tower Partners Semiconductor Co. CMOS 65 nm ISC process. The purpose was to characterise and qualify this process and to optimise the sensor for the next generation of Monolithic Active…

Three-dimensional (3D) pixel sensors are a promising technology for implementing the 4D-tracking paradigm in high-radiation environments. Despite their advantages in radiation tolerance, 3D pixel sensors exhibit non-uniform electric and…

In this work we have developed a prototype gaseous pixel detector by combining a micromegas grid with a Timepix3 chip for the readout. The micromegas foil supported by a matrix of pillars about 50 $\mathrm{\mu m}$ high was manually placed…

Investigation of HV-CMOS sensors for use as a tracking detector in the ATLAS experiment at the upgraded LHC (HL-LHC) has recently been an active field of research. A potential candidate for a pixel detector built in Silicon-On-Insulator…

Using multi-channel time-resolved current measurements (multi TCT), the charge collection of p+n silicon strip sensors for electron-hole pairs produced close to the Si-SiO2 interface by a focussed sub-nanosecond laser with a wavelength of…

Detectors based on pixels with timing capabilities are gaining increasing importance in the last years. Next-to-come high-energy physics experiments at colliders require the use of time information in tracking, due to the expected levels of…

A silicon 3D detector with a single cell of 50x50 um2 was produced and evaluated for timing applications. The measurements of time resolution were performed for 90Sr electrons with dedicated electronics used also for determining time…

A new silicon-strip readout chip named "SliT" has been developed for the measurement of the muon anomalous magnetic moment and electric dipole moment at J-PARC. The SliT is designed in the Silterra 180 nm CMOS technology with mixed-signal…

Detectors based on pixels with timing capabilities are gaining increasing importance in the last years. Next-to-come high-energy physics experiments at colliders requires the use of time information in tracking, due to the increasing levels…

We apply lessons from fast timing detector R$\&$D to strategies for initial calibration of large timing arrays at future colliders. Detector R$\&$D often benefits from detailed information about the sensor and front-end signal (waveform…

Thin pad detectors made from 75 $\mu$m thick epitaxial silicon on low resistivity substrate were irradiated with reactor neutrons to fluences from 2.5$\times 10^{16}$ n/cm$^2$ to 1$\times 10^{17}$ n/cm$^2$. Edge-TCT measurements showed that…

In this paper, we propose an analog pixel differencing circuit for differentiating pixels between frames directly from CMOS pixels. The analog information processing at sensor is a topic of growing appeal to develop edge AI devices. The…