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Modern scientific instruments operate under increasingly extreme constraints on bandwidth, latency, and power. Inference at the sensor edge determines experimental data collection efficiency by deciding which information to save for further…

Progress is reported on the development and testing of Monolithic Active Pixel Sensors (MAPS) for a Si-W ECAL for the ILC. Using laser and source setups, a first version of the sensor has been characterised through measurements of the…

First measurements are presented from a newly commissioned two-photon absorption (TPA) setup at Nikhef. The characterisation of the various components of the system is discussed. Two planar silicon sensors, one being electron collecting and…

Instrumentation and Detectors · Physics 2022-02-23 R. Geertsema , K. Akiba , M. van Beuzekom , T. Bischoff , K. Heijhoff , H. Snoek

The analog front-end for the Low Gain Avalanche Detector (LGAD) based precision timing application in the CMS Endcap Timing Layer (ETL) has been prototyped in a 65 nm CMOS mini-ASIC named ETROC0. Serving as the very first prototype of ETL…

In view of the high luminosity phase of the LHC (HL-LHC) to start operation around 2026, a major upgrade of the tracker system for the ATLAS experiment is in preparation. The expected neutron equivalent fluence of up to 2.4 * 1e16 1 MeV…

Instrumentation and Detectors · Physics 2018-02-14 Julien-Christopher Beyer , Alessandro La Rosa , Anna Macchiolo , Natascha Savic , Reem Taibah

Recent progress in active-edge technology of silicon sensors enables the development of large-area tiled silicon pixel detectors with small dead space between modules by utilizing edgeless sensors. Such technology has been proven in…

Instrumentation and Detectors · Physics 2015-06-23 Jiaguo Zhang , Damaris Tartarotti Maimone , David Pennicard , Milija Sarajlic , Heinz Graafsma

The timing performance of silicon sensors bump-bonded to Timepix3 ASICs is investigated, prior to and after different types of irradiation up to $8 \times 10^{15} 1 \mathrm{\,Me\kern -0.1em V} \mathrm{ \,n_{eq}} {\mathrm{ \,cm}}^{-2}$. The…

A characterisation of the Timepix4 pixel front-end with a strong focus on timing performance is presented. Externally generated test pulses were used to probe the per-pixel time-to-digital converter (TDC) and measure the time-bin sizes by…

Instrumentation and Detectors · Physics 2022-07-13 K. Heijhoff , K. Akiba , R. Ballabriga , M. van Beuzekom , M. Campbell , A. P. Colijn , M. Fransen , R. Geertsema , V. Gromov , X. Llopart Cudie

For the High-Luminosity phase of LHC, the ATLAS experiment is proposing the addition of a High Granularity Timing Detector (HGTD) in the forward region to mitigate the effects of the increased pile-up. The chosen detection technology is Low…

We report the design and characterization of a CMOS pixel direct charge sensor, Topmetal-II-, fabricated in a standard 0.35um CMOS Integrated Circuit process. The sensor utilizes exposed metal patches on top of each pixel to directly…

Instrumentation and Detectors · Physics 2015-12-23 Mangmang An , Chufeng Chen , Chaosong Gao , Mikyung Han , Rong Ji , Xiaoting Li , Yuan Mei , Quan Sun , Xiangming Sun , Kai Wang , Le Xiao , Ping Yang , Wei Zhou

We report on the development of a front-end ASIC for silicon-strip detectors of the J-PARC Muon g-2/EDM experiment. This experiment aims to measure the muon anomalous magnetic moment and electric dipole moment precisely to explore new…

Instrumentation and Detectors · Physics 2019-01-30 Yuki Tsutsumi , Tetsuichi Kishishita , Yutaro Sato , Masayoshi Shoji , Manobu M. Tanaka , Tsutomu Mibe , Junji Tojo

Time and charge measurements over a large dynamic range from 1 Photo Electron (P.E.) to 4000 P.E. are required for the Water Cherenkov Detector Array (WCDA), which is one of the key components in the Large High Altitude Air Shower…

Instrumentation and Detectors · Physics 2019-09-26 Yu Liang , Lei Zhao , Yuxiang Guo , Jiajun Qin , Yunfang Yang , Boyu Cheng , Shubin Liu , Qi An

In recent years, scientific CMOS (sCMOS) sensors have been vigorously developed and have outperformed CCDs in several aspects: higher readout frame rate, higher radiation tolerance, and higher working temperature. For silicon image sensors,…

Instrumentation and Methods for Astrophysics · Physics 2023-03-16 Qinyu Wu , Zhixing Ling , Chen Zhang , Quan Zhou , Xinyang Wang , Weimin Yuan , Shuang-Nan Zhang

For the high luminosity phase of the Large Hadron Collider to start operation around 2026, a major upgrade of the ATLAS Inner Tracker (ITk) is in preparation. Thanks to their low power dissipation and high charge-collection efficiency after…

Instrumentation and Detectors · Physics 2018-11-14 Julien-Christopher Beyer , Alessandro La Rosa , Anna Macchiolo , Richard Nisius , Natascha Savic , Reem Taibah

In this paper results of Edge-TCT and I-V measurements with passive test structures made in LFoundry 150 nm HV-CMOS process on p-type substrates with different initial resistivities ranging from 0.5 to 3 k$\Omega$cm are presented. Samples…

A time projection chamber (TPC) based on a gaseous chamber with micro pixel electrodes (micro-PIC) has been developed for measuring three-dimensional tracks of charged particles. The micro-PIC with a detection area of 10 cm square consists…

High Energy Physics - Experiment · Physics 2015-06-25 H. Kubo , K. Miuchi , T. Nagayoshi , A. Ochi , R. Orito , A. Takada , T. Tanimori , M. Ueno

The Inner Tracking System (ITS) of the ALICE experiment at CERN will undergo an upgrade during the LHC long shutdown 3, in which the three innermost tracking layers will be replaced. This upgrade, named the Inner Tracking System 3 (ITS3),…

Instrumentation and Detectors · Physics 2023-12-14 M. Buckland

We present the results of using standard IMARAD CZT detectors with a 100 MHz readout of the anode and cathode pulses. The detectors, 2 cm x 2 cm large and 0.5 cm thick, have 64 Indium pixellated anode contacts at a pitch of 2.5 mm. We…

Astrophysics · Physics 2009-09-29 J. S. Perkins , H. Krawczynski , P. Dowkontt

When redox active molecules are covalently tethered to the surface of the n-doped silicon, light induces their oxidation by the semiconductor. To visualize this charge separation we have followed the formation and decay of the surface…

Materials Science · Physics 2008-12-31 Andrei V. Pakoulev , Vladimir Burtman , Dmitry Zaslavsky