Results in this paper present an in-depth study of time resolution for active pixels of the RD50-MPW2 prototype CMOS particle detector. Measurement techniques employed include Backside- and Edge-TCT configurations, in addition to electrons from a 90Sr source. A sample irradiated to 5⋅1014neq/cm2 was used to study the effect of radiation damage. Timing performance was evaluated for the entire pixel matrix and with positional sensitivity within individual pixels as a function of the deposited charge. Time resolution obtained with TCT is seen to be uniform throughout the pixel's central region with approx. 220ps at 12ke− of deposited charge, degrading at the edges and lower values of deposited charge. 90Sr measurements show a slightly worse time resolution as a result of delayed events coming from the peripheral areas of the pixel.
@article{arxiv.2312.01793,
title = {Measurements of time resolution of the RD50-MPW2 DMAPS prototype using TCT and $^{90}\mathrm{Sr}$},
author = {J. Debevc and M. Franks and B. Hiti and U. Kraemer and G. Kramberger and I. Mandić and R. Marco-Hernández and D. J. L. Nobels and S. Powell and J. Sonneveld and H. Steininger and C. Tsolanta and E. Vilella and C. Zhang},
journal= {arXiv preprint arXiv:2312.01793},
year = {2024}
}