Time resolution of silicon pixel sensors

Werner Riegler; Gianluca Aglieri Rinella

doi:10.1088/1748-0221/12/11/P11017

Time resolution of silicon pixel sensors

Instrumentation and Detectors 2019-06-27 v4

Authors: Werner Riegler , Gianluca Aglieri Rinella

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Abstract

We derive expressions for the time resolution of silicon detectors, using the Landau theory and a PAI model for describing the charge deposit of high energy particles. First we use the centroid time of the induced signal and derive analytic expressions for the three components contributing to the time resolution, namely charge deposit fluctuations, noise and fluctuations of the signal shape due to weighting field variations. Then we derive expressions for the time resolution using leading edge discrimination of the signal for various electronics shaping times. Time resolution of silicon detectors with internal gain is discussed as well.

Keywords

time resolution silicon pixel sensors Landau theory PAI model charge deposit fluctuations leading edge discrimination internal gain weighting field

Cite

@article{arxiv.1706.04883,
  title  = {Time resolution of silicon pixel sensors},
  author = {Werner Riegler and Gianluca Aglieri Rinella},
  journal= {arXiv preprint arXiv:1706.04883},
  year   = {2019}
}

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