Related papers: Anisotropic MagnetoMemristance
Engineering magnetic anisotropy in a ferro- or ferrimagnetic (FM) thin film is crucial in spintronic device. One way to modify the magnetic anisotropy is through the surface of the FM thin film. Here, we report the emergence of a…
Temperature-dependent resistivity and magnetoresistance are measured in bulk tetragonal phase of antiferromagnetic CuMnAs and the latter is found to be anisotropic both due to structure and magnetic order. We compare these findings to model…
We present three-dimensional magnetohydrodynamic simulations of the nonlinear evolution of the magnetorotational instability (MRI) with a non-zero Ohmic resistivity. The properties of the saturated state depend on the initial magnetic field…
The capacitance of a parallel plate capacitor can depend on applied magnetic field. Previous studies have identified capacitance changes induced via classical Lorentz force or spin-dependent Zeeman effects. Here we measure a magnetization…
We measure the giant magnetoresistance (GMR) with the current both parallel and perpendicular to the direction of the magnetization in the ferromagnetic (FM) layers and thus probe the anisotropy of the effective mean free paths for the…
Magnetization of soft-ferromagnetic nano- and microtubes of nanometer-thin walls (a single-widening rolled-up nanomembranes) is theoretically studied using analytical and numerical approaches including different stress-induced anisotropies.…
We study the implications of the anisotropic magnetic resistance on permalloy nanowires, and in particular on the property of the resistance depending on the type of lattice. We discuss how the internal spin configuration of artificial spin…
Resistive memories (RRAM) are promising candidates for replacing present nonvolatile memories and realizing storage class memories; hence resistance switching devices are of particular interest. These devices are typically memristive, with…
Reliable operation of perpendicular spin-transfer-torque magnetic random-access memory (p-STT-MRAM) requires control of magnetic alignment within the synthetic antiferromagnet (SAF) reference layer. At nanopillar dimensions, however,…
The increasing need to store large amounts of information with an ultra-dense, reliable, low power and low cost memory device is driving aggressive efforts to improve upon current perpendicular magnetic recording technology. However, the…
Amorphous insulators have localized wave functions that decay with the distance $r$ following exp($-r/\zeta$). Since nanoscale conduction is not excluded at $r<\zeta$, one may use amorphous insulators and take advantage of their size effect…
Magnons, bosonic quasiparticles carrying angular momentum, can flow through insulators for information transmission with minimal power dissipation. However, it remains challenging to develop a magnon-based logic due to the lack of efficient…
The magnetoresistance (MR) of 10 nm to 200 nm thin polycrystalline Co-films, deposited on glass and insulating Si(100), is studied in fields up to 120 kOe, aligned along the three principal directions with respect to the current:…
Large-scale integration of emerging nanoscale non-volatile memory devices, e.g. resistive random-access memory (RRAM), can enable a new generation of neuromorphic computers that can solve a wide range of machine learning problems. Such…
Currently, aging effects occurring in multilayer systems attract much attention from researchers. In our research we looked at the behavior of multilayer systems that depend on anisotropy, magnetoresistance and susceptibility.All these…
The impact of carrier localization on the anisotropic magnetoresistance (AMR) has been investigated in NSSMO thin films. Carrier localization is caused by the reduced average radius of the A-site of the perovskite lattice and enhanced size…
We report the first measurements of effects of large current densities on current-perpendicular-to-plane magnetoresistance (MR) of magnetic multilayers containing two antiferromagnetic layers separated by a non-magnetic layer. These…
We predict the existence of a new metastable magnetization state in a single-domain nanomagnet with uniaxial shape anisotropy. It emerges when a spin-polarized current, delivering a spin-transfer-torque, is injected into the nanomagnet. It…
We report the observation of tunneling anisotropic magnetoresistance (TAMR) in an organic spin-valve-like structure with only one ferromagnetic electrode. The device is based on a new high mobility perylene diimide-based n-type organic…
Bulk metallic samples were synthesized from different binary powder mixtures consisting of elemental Cu, Co, and Fe using severe plastic deformation. Small particles of the ferromagnetic phase originate in the conductive Cu phase, either by…