Related papers: Anisotropic MagnetoMemristance
We investigate the magnetization dynamics of ferromagnetic nanoparticles in the atomistic approach taking account of surface anisotropy and the spin misalignment it causes. We demonstrate that such inhomogeneous spin configurations induce…
This article proposes a general approach to the simulation and design of a multilayer perceptron (MLP) network on the basis of cross-bar arrays of metal-oxide memristive devices. The proposed approach uses the ANNM theory, tolerance theory,…
A mechanism of current-induced magnetization reversal based on the parametric resonance is described. The source of the magnetization reversal is a current-induced magnetic field, which is applied perpendicularly to the easy axis of…
MBE-grown, 5 nm-thick annealed Ga0.95Mn0.05As films with Tc~90K demonstrate transition from metallic to insulating state below To~10K, where sheet resistances Rsh~h/e2 and both longitudinal Rxx and transverse Rxy components become…
The laser-induced precession of magnetization in (Ga,Mn)As samples with different magnetic anisotropy was studied by the time-resolved magneto-optical method. We observed that the dependence of the precession amplitude on the external…
Ferromagnetic resonance (FMR) spectroscopy is a powerful method for quantifying internal magnetic anisotropy fields in nanoparticles, which is important in a wide range of biomedical and storage applications. The interpretation of FMR…
The discovery of fascinating ways to control and manipulate antiferromagnetic materials have garnered considerable attention as an attractive platform to explore novel spintronic phenomena and functionalities. Layered antiferromagnets…
Diffusive memristors continue to receive tremendous interest due to their ability to emulate biological neurons and thus aid the development of bio-inspired computation technology. A major issue with the diffusive memristor is the inability…
We use lithographically induced strain relaxation to periodically modulate the magnetic anisotropy in a single (Ga,Mn)As layer. This results in a lateral magnetoresistance device where two non-volatile magnetic states exist at zero external…
Our experimental and theoretical study of the non-crystalline and crystalline components of the anisotropic magnetoresistance (AMR) in (Ga,Mn)As is aimed at exploring the basic physical aspects of this relativistic transport effect. The…
We address the theory of the coupled lattice and magnetization dynamics of freely suspended single-domain nanoparticles. Magnetic anisotropy generates low-frequency satellite peaks in the microwave absorption spectrum and a blueshift of the…
Spin-valve is a microelectronic device in which high and low resistance states are realized by utilizing both charge and spin of carriers. Spin-valve structures used in modern hard drive read-heads and magnetic random access memories…
The FMR linewidth and its anisotropy in F$_1$/f/F$_2$/AF multilayers, where spacer f has a low Curie point compared to the strongly ferromagnetic F$_1$ and F$_2$, is investigated. The role of the interlayer exchange coupling in…
Slow magnetic relaxation and two level fluctuations measurements under high current injection is performed in single-contacted ferromagnetic nanostructures. The magnetic configurations of the samples are described by two metastable states…
The large saturation magnetization in conventional dense moment ferromagnets offers flexible means of manipulating the ordered state through demagnetizing shape anisotropy fields but these dipolar fields, in turn, limit the integrability of…
The necessity of having an electronic device working in relevant biological time scales with a small footprint boosted the research of a new class of emerging memories. Ag-based volatile resistive switching memories (RRAMs) feature a…
The progress in the semiconductor industry has resulted in great demand for high-frequency magnetic materials applicable in microfabricated inductor cores. Nanocomposite materials, containing magnetic nanoparticles in a non-conducting…
Antiferromagnets (AFs) are remarkable magnetically ordered materials that due to the absence of a net magnetic moment do not generate dipolar fields and are insensitive to external magnetic field perturbations. However, it has been…
Memristive devices, whose resistance can be controlled by applying a voltage and further retained, are attractive as possible circuit elements for neuromorphic computing. This new type of devices poses a number of both technological and…
Recent measurements of the magnetoimpedance (at a fixed frequency of 1 MHz) of cobalt-rich wires subjected to torsion stress show an asymmetry as a function of torsion angle stemming from residual anisotropies induced during wire…