Related papers: Anisotropic MagnetoMemristance
We investigate the dc electric response induced by ferromagnetic resonance in ferromagnetic Permalloy (Ni80Fe20) microstrips. The resulting magnetization precession alters the angle of the magnetization with respect to both dc and rf…
Anisotropic magnetoresistance (AMR) is a well-known magnetoelectric coupling phenomenon, commonly exhibiting two-fold symmetry relative to the magnetic field. In this study, we reveal the existence of high-order AMRs in two-dimensional (2D)…
The antiferromagnetically (AFM) ordered state of GdRh$_{2}$Si$_{2}$ which consists of AFM-stacked ferromagnetic layers is investigated by magnetic resonance spectroscopy. The almost isotropic Gd$^{3+}$ paramagnetic resonance becomes…
A new approach to increase the downsize scalability of perpendicular STT-MRAM is presented. It consists in significantly increasing the thickness of the storage layer in out-of-plane magnetized tunnel junctions (pMTJ) as compared to…
Nanoscale bilayers containing at least one magnetic layer exhibit universal unusual anisotropic magnetoresistance (UAMR) and unidirectional magnetoresistance (UMR). They are currently understood through various mechanisms related to the…
It has been demonstrated that magnetocrystalline anisotropies in (Ga,Mn)As are sensitive to lattice strains as small as 10^-4 and that strain can be controlled by lattice parameter engineering during growth, through post growth lithography,…
We present details of our experimental and theoretical study of the components of the anisotropic magnetoresistance (AMR) in (Ga,Mn)As. We develop experimental methods to yield directly the non-crystalline and crystalline AMR components…
Magnetoresistance (MR) has attracted tremendous attention for possible technological applications. Understanding the role of magnetism in manipulating MR may in turn steer the searching for new applicable MR materials. Here we show that…
The development of new computing technologies has given a new stimulus in the study of multiferroics. The use of multiferroics allows the realization of competitive energy efficient scalable logic and storage devices. The low-power…
The speed of writing of state-of-the-art ferromagnetic memories is physically limited by an intrinsic GHz threshold. Recently, an alternative research direction has been initiated by realizing memory devices based on antiferromagnets in…
We have fabricated (Ga,Mn)As nanostructures in which domain walls can be pinned by sub-10 nm constrictions. Controlled by shape anisotropy, we can switch the regions on either side of the constriction to either parallel or antiparallel…
Antiferromagnetic (AFM) spintronics, where magneto-transport is governed by an antiferromagnet instead of a ferromagnet, opens fascinating new perspectives for both fundamental research and device technology, owing to their intrinsic…
Within a phenomenological approach the density of induced uniaxial anisotropy in nanostructures K(r) is treated as a physical field additional to the magnetization M(r). The equilibrium distributions of K(r) are formed under the influence…
The perpendicular shape anisotropy-spin transfer torque-magnetic random access memories (PSASTT-MRAMs) takes advantage of the nanopillar free-layer geometry for securing a good thermal stability factor from the shape anisotropy of the…
Resistive random access memory (RRAM) is very well known for its potential application in in-memory and neural computing. However, they often have different types of device-to-device and cycle-to-cycle variability. This makes it harder to…
The advent of reliable, nanoscale memristive components is promising for next generation compute-in-memory paradigms, however, the intrinsic variability in these devices has prevented widespread adoption. Here we show coherent electron wave…
Resistive random-access memories, also known as memristors, whose resistance can be modulated by the electrically driven formation and disruption of conductive filaments within an insulator, are promising candidates for neuromorphic…
The electrical resistivity for a current moving perpendicular to layers (chains) in quasi-2D (quasi-1D) metals under an applied magnetic field of varying orientation is studied using Boltzmann transport theory. We consider the simplest…
One of recent surprising discoveries is the unusual anisotropic magnetoresistance (UAMR) that depends on two magnetization components perpendicular to the current differently, in contrast to the conventional anisotropic magnetoresistance…
Anisotropic magnetoresistance (AMR) offers a robust electrical readout of antiferromagnetic (AFM) states, playing a central role in the rapidly advancing field of AFM spintronics. Despite its great versatility, electrical probing of the…