Related papers: Anisotropic MagnetoMemristance
The desire to maximize the sensitivity of read/write heads and thus the information density of magnetic storage devices has produced an intense interest in the magnetoresistance (MR) of magnetic materials. Recent discoveries include…
Angular-dependent in-plane magnetoresistance (AMR) for single crystal $Na_{0.34}(H_3O)_{0.15}CoO_2$ with charge ordering is studied systematically. The anisotropic magnetoresistance shows a twofold symmetry at high temperature with rotating…
Resistance-change random access memory (RRAM) devices are nanoscale metal-insulator-metal structures that can store information in their resistance states, namely the high resistance (HRS) and low resistance (LRS) states. They are a…
Current-induced magnetization excitation is a core phenomenon for next-generation magnetic nanodevices, and has been attributed to the spin-transfer torque (STT) that originates from the transfer of the spin angular momentum between a…
The tunnelling anisotropic magnetoresistance (TAMR) effect describes the sensitivity of spin-polarized electron transport to the orientation of the magnetization with respect to the crystallographic axes. As the TAMR effect requires only a…
We report the realization of a read-write device out of the ferromagnetic semiconductor (Ga,Mn)As as the first step to fundamentally new information processing paradigm. Writing the magnetic state is achieved by current-induced switching…
Tunneling anisotropic magnetoresistance (TAMR) effect, discovered recently in (Ga,Mn)As ferromagnetic semiconductors, arises from spin-orbit coupling and reflects the dependence of the tunneling density of states in a ferromagnetic layer on…
The nonlinear transport properties of nanometer-scale junctions formed between an inert metallic tip and an Ag film covered by a thin Ag$_{2}$S layer are investigated. Suitably prepared samples exhibit memristive behavior with…
Ferromagnetic resonance (FMR) serves as a powerful probe of magnetization dynamics and anisotropy in percolating ferromagnets, where short-range interactions govern long-range magnetic order. We apply this approach to Ga$_{1-x}$Mn$_x$N ($x…
Resistance switching devices are of special importance because of their application in resistive memories (RRAM) which are promising candidates for replacing current nonvolatile memories and realize storage class memories. These devices…
Magnetic nano-objects possess great potential for more efficient data processing, storage and neuromorphic type of applications. Using high perpendicular magnetic anisotropy synthetic antiferromagnets in the form of multilayer-based…
The periodic response of magnetoresistance to an externally tunable parameter, such as magnetic field or chemical composition, in the bulk or an artificially designed material has been exploited for technological applications as well as to…
We establish theoretically that in nonmagnetic semiconducting bilayer or multilayer thin film systems rolled up into compact quasi-one-dimensional nanoarchitectures, the ballistic magnetoresistance is very anisotropic: conductances depend…
Memory effects are ubiquitous in nature and are particularly relevant at the nanoscale where the dynamical properties of electrons and ions strongly depend on the history of the system, at least within certain time scales. We review here…
Memristors are nonlinear two-terminal circuit elements whose resistance at a given time depends on past electrical stimuli. Recently, networks of memristors have received attention in neuromorphic computing since they can be used as a tool…
We report the observation of ferromagnetic resonance (FMR) and the determination of the magnetocrystalline anisotropy in (100)-oriented single-crystalline thin film samples of GaMnP with x=0.042. The contributions to the magnetic anisotropy…
Atomic-scale magnetic nanostructures are promising candidates for future information processing devices. Utilizing external electric field to manipulate their magnetic properties is an especially thrilling project. Here, by careful…
The concept of perpendicular shape anisotropy spin-transfer torque magnetic random-access memory (PSA-STT-MRAM) consists in increasing the storage layer thickness to values comparable to the cell diameter, to induce a perpendicular shape…
How to realize applicably appreciated functionalities based on the coupling between charge and spin degrees of freedom is still a challenge in the field of spintronics. For example, anisotropic magnetoresistance (AMR) effect is utilized to…
One essential feature in MRAM cells is the spin torque efficiency, which describes the ratio of the critical switching current to the energy barrier. Within this paper it is reported that the spin torque efficiency can be improved by a…