English

Strongly anisotropic ballistic magnetoresistance in compact three-dimensional semiconducting nanoarchitectures

Mesoscale and Nanoscale Physics 2014-12-10 v2

Abstract

We establish theoretically that in nonmagnetic semiconducting bilayer or multilayer thin film systems rolled up into compact quasi-one-dimensional nanoarchitectures, the ballistic magnetoresistance is very anisotropic: conductances depend strongly on the direction of an externally applied magnetic field. This phenomenon originates from the curved open geometry of rolled-up nanotubes, which leads to a tunability of the number of quasi-one-dimensional magnetic subbands crossing the Fermi energy. The experimental significance of this phenomenon is illustrated by a sizable anisotropy that scales with the inverse of the winding number, and persists up to a critical temperature that can be strongly enhanced by increasing the strength of the external magnetic field or the characteristic radius of curvature, and can reach room temperature.

Keywords

Cite

@article{arxiv.1408.1775,
  title  = {Strongly anisotropic ballistic magnetoresistance in compact three-dimensional semiconducting nanoarchitectures},
  author = {Ching-Hao Chang and Jeroen van den Brink and Carmine Ortix},
  journal= {arXiv preprint arXiv:1408.1775},
  year   = {2014}
}

Comments

5 pages, 4 figures, one supplemental material