The capacitance of a parallel plate capacitor can depend on applied magnetic field. Previous studies have identified capacitance changes induced via classical Lorentz force or spin-dependent Zeeman effects. Here we measure a magnetization direction dependent capacitance in parallel-plate capacitors where one plate is a ferromagnetic semiconductor, gallium manganese arsenide. This anisotropic magneto-capacitance is due to the anisotropy in the density of states dependent on the magnetization through the strong spin-orbit interaction.
@article{arxiv.1505.00170,
title = {Anisotropic magneto-capacitance in ferromagnetic-plate capacitors},
author = {J. A. Haigh and C. Ciccarelli and A. C. Betz and A. Irvine and V. Novák and T. Jungwirth and J. Wunderlich},
journal= {arXiv preprint arXiv:1505.00170},
year = {2016}
}