Magnons, bosonic quasiparticles carrying angular momentum, can flow through insulators for information transmission with minimal power dissipation. However, it remains challenging to develop a magnon-based logic due to the lack of efficient electrical manipulation of magnon transport. Here we present a magnon logic-in-memory device in a spin-source/multiferroic/ferromagnet structure, where multiferroic magnon modes can be electrically excited and controlled. In this device, magnon information is encoded to ferromagnetic bits by the magnon-mediated spin torque. We show that the ferroelectric polarization can electrically modulate the magnon spin-torque by controlling the non-collinear antiferromagnetic structure in multiferroic bismuth ferrite thin films with coupled antiferromagnetic and ferroelectric orders. By manipulating the two coupled non-volatile state variables (ferroelectric polarization and magnetization), we further demonstrate reconfigurable logic-in-memory operations in a single device. Our findings highlight the potential of multiferroics for controlling magnon information transport and offer a pathway towards room-temperature voltage-controlled, low-power, scalable magnonics for in-memory computing.
@article{arxiv.2309.14614,
title = {Multiferroic Magnon Spin-Torque Based Reconfigurable Logic-In-Memory},
author = {Yahong Chai and Yuhan Liang and Cancheng Xiao and Yue Wang and Bo Li and Dingsong Jiang and Pratap Pal and Yongjian Tang and Hetian Chen and Yuejie Zhang and Witold Skowroński and Qinghua Zhang and Lin Gu and Jing Ma and Pu Yu and Jianshi Tang and Yuan-Hua Lin and Di Yi and Daniel C. Ralph and Chang-Beom Eom and Huaqiang Wu and Tianxiang Nan},
journal= {arXiv preprint arXiv:2309.14614},
year = {2023}
}