Related papers: A Multifunctional Sub-10nm Transistor

Graphene nanoribbons (GNRs) have been proposed as potential building blocks for field effect transistor (FET) devices due to their quantum confinement bandgap. Here, we propose a novel GNR device concept, enabling the control of both charge…

Traditional electronic devices are well-known to improve in speed and energy-efficiency as their dimensions are reduced to the nanoscale. However, this scaling behavior remains unclear for nonlinear dynamical circuit elements, such as Mott…

We show that thin horizontal arrays of single wall carbon nanotubes (SWNTs) suspended above the channel of silicon MOSFETs can be used as vibrating gate electrodes. This new class of nano-electromechanical system (NEMS) combines the unique…

Memtranstor that correlates charge and magnetic flux via nonlinear magnetoelectric effects has a great potential in developing next-generation nonvolatile devices. In addition to multi-level nonvolatile memory, we demonstrate here that…

In this paper, a circuit employing current controlled current conveyor trans-conductance amplifiers (CCCCTAs) as active element is proposed which can function both as biquad filter and oscillator. It uses two CCCCTAs and two capacitors. As…

We present a compact current sensor based on a superconducting microwave lumped-element resonator with a nanowire kinetic inductor, operating at 4.2 K. The sensor is suitable for multiplexed readout in GHz range of large-format arrays of…

In this article, we present a configurable field-effect transistor (FET), where not only polarity (n- and p-type), but the conduction mechanism of a FET can also be configured dynamically. As a result, we can have both types of devices,…

Here we propose and analyze the behavior of a FET--like switching device, the Mott transition field effect transistor, operating on a novel principle, the Mott metal--insulator transition. The device has FET-like characteristics with a low…

We report amplification of biomolecular recognition signal in lithographically defined silicon nanochannel devices. The devices are configured as field effect transistors (FET) in the reversed source-drain bias region. The measurement of…

The possibility of optimization of high voltage hybrid SIT-MOS transistors (HSMT) by local reduction of the lifetime near anode emitter and/or reduction of the anode emitter injection ability by three different ways has been investigated…

This work investigates energy filtering in nanowires, where pass and stopbands are obtained by including superlattices in the wire. When a pair of such superlattices is placed in series, each being controlled by a gate, it can act as a…

We propose and numerically simulate novel reconfigurable logic gates employing spin metal-oxide-semiconductor field-effect transistors (spin MOSFETs). The output characteristics of the spin MOSFETs depend on the relative magnetization…

We demonstrate a class of model nano-electromechanical systems (NEMS) based on multiwalled carbon nanotubes (MWNTs) which has longer inner cores coaxially oscillating inside their respective shorter outer shell holders and can operate at…

Nanoscale superconductor-semiconductor hybrid devices are assembled from InAs semiconductor nanowires individually contacted by aluminum-based superconductor electrodes. Below 1 K, the high transparency of the contacts gives rise to…

Nanomechanical systems offer a versatile platform for both fundamental science and industrial applications. Resonating vibration has been demonstrated to enable an ultrasensitive detection of various physical quantities, with emerging…

We have fabricated the Bloch transistor shunted on-chip by a small-sized Cr resistor with Rs about 1 kOhm. The Bloch transistor normally consists of two small Josephson junctions connected in series, which in our case have been replaced by…

The performance limits of the multilayer graphene nanoribbon (GNR) field-effect transistor (FET) are assessed and compared to those of monolayer GNR FET and carbon nanotube (CNT) FET. The results show that with a thin high-k gate insulator…

We present a gate-voltage tunable transmon qubit (gatemon) based on planar InAs nanowires that are selectively grown on a high resistivity silicon substrate using III-V buffer layers. We show that low loss superconducting resonators with an…

The monolithic integration of electromechanical transduction at the nanoscale with advanced CMOS is among the most important challenges of semiconductor electronic systems to leverage the multi-domain sensing, actuation, and resonance…

We report on the design and performance of an on-chip microwave circulator with a widely (GHz) tunable operation frequency. Non-reciprocity is created with a combination of frequency conversion and delay, and requires neither permanent…