English

The Miniband Alignment Field-Effect Transistor: a superlattice-based steep-slope nanowire FET

Mesoscale and Nanoscale Physics 2016-10-03 v2

Abstract

This work investigates energy filtering in nanowires, where pass and stopbands are obtained by including superlattices in the wire. When a pair of such superlattices is placed in series, each being controlled by a gate, it can act as a transistor where the (mis-)alignment of its minibands turns the device on (off). It is shown that, in the ballistic current-regime, the transition between the on and off state occurs in a narrow gate-bias range, giving rise to sub-60 mV per decade switching behavior.

Keywords

Cite

@article{arxiv.1609.09372,
  title  = {The Miniband Alignment Field-Effect Transistor: a superlattice-based steep-slope nanowire FET},
  author = {Maarten Thewissen and Bart Sorée and Wim Magnus},
  journal= {arXiv preprint arXiv:1609.09372},
  year   = {2016}
}