We show that thin horizontal arrays of single wall carbon nanotubes (SWNTs) suspended above the channel of silicon MOSFETs can be used as vibrating gate electrodes. This new class of nano-electromechanical system (NEMS) combines the unique mechanical and electronic properties of SWNTs with an integrated siliconbased motion detection. Its electrical response exhibits a clear signature of the mechanical resonance of SWNTs arrays (120-150 MHz) showing that these thin horizontal arrays behave as a cohesive, rigid and elastic body membrane with a Young modulus in the order of 1-10 GPa and ultra-low mass. The resonant frequency can be tuned by the gate voltage and its dependence is well understood within the continuum mechanics framework.
@article{arxiv.1008.4718,
title = {SWNT-array resonant MOS transistor},
author = {A. Arun and S. Campidelli and A. Filoramo and V. Derycke and P. Salet and A. M. Ionescu and M. F. Goffman},
journal= {arXiv preprint arXiv:1008.4718},
year = {2015}
}
Comments
11 pages, 4 figures, supplementary information file can be provided by e-mail (mailto: marcelo.goffman@cea.fr)