Building smaller transistors with enhanced functionality is critical in extending the limits of Moores law and meeting the demands of the electronics industry. Here we demonstrate transistor operation in a suspended single carbon nanotube (CNT) using feedback-enabled radiation pressure of a near-field focused laser that enabled significant changes in conductivity of the CNT. Further, using in-situ tip-enhanced Raman spectroscopy, we show that the change in conductivity of over five orders in magnitude is accompanied by self-induced defect states within the CNT. The entire structure is less than 10 nm in dimension and shows promise of scalability. This is a novel method for achieving logic operations at the nanoscale.
@article{arxiv.1607.02612,
title = {Resonant optical gating of suspended carbon nanotube transistor},
author = {Robert McCoy and Fredrick Anderson and Eric L. Carter and Robinson L. Smith},
journal= {arXiv preprint arXiv:1607.02612},
year = {2016}
}