Related papers: A Multifunctional Sub-10nm Transistor
We report on transport measurement study of top-gated field effect transistors made out of InSb nanowires grown by chemical vapor deposition. The transistors exhibit ambipolar transport characteristics revealed by three distinguished…
Superconducting diodes enable dissipationless directional transport, yet achieving electrical tunability and scalability remains a major challenge for circuit-level integration. Here, we demonstrate an electrothermal-switch superconducting…
Recently, short channel effects (SCE) and power consumption dissipation problems pose big challenges which need imperative actions to be taken to deal with for field effect transistor to further scale down as semiconductor technology enters…
Silicon-On-Insulator nanowire transistors of very small dimensions exhibit quantum effects like Coulomb blockade or single-dopant transport at low temperature. The same process also yields excellent field-effect transistors (FETs) for…
Gate-all-around (GAA) nanowire (NW) field-effect transistor (FET) is a promising device architecture due to its superior gate controllability than that of the conventional FinFET architecture. The significantly higher electron mobility of…
Optomechanical transduction is demonstrated for nanoscale torsional resonators evanescently coupled to optical microdisk whispering gallery mode resonators. The on-chip, integrated devices are measured using a fully fiber-based system,…
Field-effect transistors based on band-to-band tunneling (BTBT) have gained a lot of recent interest due to their potential for reducing power dissipation in integrated circuits. In this paper we present a detailed performance comparison…
We analyze the quantum information processing capability of a superconducting transmon circuit used to mediate interactions between quantum information stored in a collection of phononic crystal cavity resonators. Having only a single…
Tunnel Field Effect Transistors (TFET) have extremely low leakage current, exhibit excellent subthreshold swing and are less susceptible to short channel effects. However, TFETs do face certain special challenges, particularly with respect…
Large-scale quantum computing requires cryogenic electronic controllers such as control/readout circuit and routing circuit. However, current technologies face high power dissipation problems, hindering large-scale qubit integration. Here,…
Single Electron Transistors (SETs) are nanoscale electrometers of unprecedented sensitivity, and as such have been proposed as read-out devices in a number of quantum computer architectures. We show that the functionality of a standard SET…
We report on a macroscopic version of the single-electron transistor (SET), which we call the soliton tunneling transistor (STT). The STT, consists of a gate capacitor coupled to a NbSe$_{3}$ crystal with a charge density wave (CDW). The…
This paper presents a low-area and low-power consumption CMOS differential current controlled oscillator (CCO) for neuromorphic applications. The oscillation frequency is improved over the conventional one by reducing the number of MOS…
Flexible electronics is an emerging field in many applications ranging from in vivo biomedical devices to wearable smart systems. The capability of conforming to curved surfaces opens the door to add electronic components to miniaturized…
Reconfigurable devices have garnered significant attention for alleviating the scaling requirements of conventional CMOS technology, as they require fewer components to construct circuits with similar function. Prior works required…
The development of next generation medicines demand more sensitive and reliable label free sensing able to cope with increasing needs of multiplexing and shorter times to results. Field effect transistor-based biosensors emerge as one of…
Spin torque nano-oscillators are nanoscopic microwave frequency generators which excel due to their large frequency tuning range and agility for amplitude and frequency modulation. Due to their compactness, they are regarded as suitable…
Ion-Sensitive Field-Effect Transistors (ISFETs) form a wide-spread technology for sensing, thanks to their label-free detection and intrinsic CMOS compatibility. Their current sensitivity, {\Delta}ID/ID, for a given {\Delta}pH, however, is…
Scaling transistors' dimensions has been the thrust for the semiconductor industry in the last 4 decades. However, scaling channel lengths beyond 10 nm has become exceptionally challenging due to the direct tunneling between source and…
We demonstrate a top-down fabricated reconfigurable field effect transistor (RFET) based on a silicon nanowire that can be electrostatically programmed to p- and n-configuration. The device unites a high symmetry of transfer…