Related papers: A Multifunctional Sub-10nm Transistor
The development of high-performance multifunctional polymer-based electronic circuits is a major step towards future flexible electronics. Here, we demonstrate a tunable approach to fabricate such devices based on rationally designed…
Integrated circuits (ICs) that can operate at high temperature have a wide variety of applications in the fields of automotive, aerospace, space exploration, and deep-well drilling. Conventional silicon-based complementary…
Nanoscale semiconductor materials have been extensively investigated as the channel materials of transistors for energy-efficient low-power logic switches to enable scaling to smaller dimensions. On the opposite end of transistor…
Nano-oscillator devices are gaining more and more attention as a prerequisite for developing novel energy-efficient computing systems based on coupled oscillators. Here, we introduce a highly scalable, frequency-tunable nano-oscillator…
Traditional transistors based on complementary metal-oxide-semiconductor (CMOS) and metal-oxide-semiconductor field-effect transistors (MOSFETs) are facing significant limitations as device scaling reaches the limits of Moore's Law. These…
In this paper, we demonstrate by simulation the general usability of an electrostatically doped and electrically reconfigurable planar field-effect transistor (FET) structure. The device concept is partly based on our already published and…
Field-effect transistors (FETs) with single gates are adversely affected by short channel effects such as drain-induced barrier lowering (DIBL) and increases in the magnitude of sub-threshold swing as the channel length is reduced.…
Most carbon nanotube field-effect transistors (CNTFETs) directly attach metal source/drain contacts to an intrinsic nanotube channel. When the gate oxide thickness is reduced, such transistors display strong ambipolar conduction, even when…
This paper presents a ternary half adder and a 1-trit multiplier using carbon nanotube transistors. The proposed circuits are designed using pass transistor logic and dynamic logic. Ternary logic uses less connections than binary logic, and…
Making ultra-short gate-length transistors significantly contributes to scaling the contacted gate pitch. This, in turn, plays a vital role in achieving smaller standard logic cells for enhanced logic density scaling. As we push the…
Multimode silicon photonics, leveraging mode-division multiplexing technologies, offers significant potential to increase capacity of large-scale multiprocessing systems for on-chip optical interconnects. These technologies have…
The continuous miniaturisation of metal-oxide-semiconductor field-effect transistors (MOSFETs) from long- to short-channel architectures has advanced beyond the predictions of Moore's Law. Continued advances in semiconductor electronics,…
In this paper a CMOS operational amplifier is presented which operates at 2V power supply and 1microA input bias current at 0.8 micron technology using non conventional mode of operation of MOS transistors and whose input is depended on…
The scaling behaviors of graphene nanoribbon (GNR) Schottky barrier field-effect transistors (SBFETs) are studied by solving the non-equilibrium Green's function (NEGF) transport equation in an atomistic basis set self-consistently with a…
Transistor is a three terminal semiconductor device normally used as an amplifier or as a switch. Here the alternating current (a.c) rectifying property of the transistor is considered. The ordinary silicon diode exhibits a voltage drop of…
A vertical transistor based on a double gated, atomically thin heterojunction is theoretically examined. Both p-type and n-type transistor operations can be conveniently achieved by using one of the two gates as the switching gate. The…
To achieve high performance thermoelectric materials and devices, thermoelectric transistors, which integrate thermoelectric effects with transistor technology, represent a promising approach. Here p type Bi0.5Sb1.5Te3 and n type…
A heterojunction Mott field effect transistor (FET) is proposed that consists of an epitaxial channel material that exhibits an electron-correlation-induced Mott metal-to-insulator transition. The Mott material is remotely (modulation)…
Using a block of three separated solid elements, a thermal source and drain together with a gate made of an insulator-metal transition material exchanging near-field thermal radiation, we introduce a nanoscale analog of a field-effect…
The concept of a magnetic bipolar transistor (MBT) is introduced. The transistor has at least one magnetic region (emitter, base, or collector) characterized by spin-splitting of the carrier bands. In addition, nonequilibrium (source) spin…