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Related papers: A Multifunctional Sub-10nm Transistor

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We report a method to pattern monolayer graphene nanoconstriction field effect transistors (NCFETs) with critical dimensions below 10 nm. NCFET fabrication is enabled by the use of feedback controlled electromigration (FCE) to form a…

Nanopositioning techniques currently applied to characterize physical properties of materials interesting for applications at the microscopic scale rely on high-voltage electronic control circuits that should have the lowest possible noise…

Instrumentation and Detectors · Physics 2014-09-12 Cristian H. Belussi , Mariano Gómez Berisso , Yanina Fasano

In this paper, we propose a novel S/D engineering for dual-gated Bilayer Graphene (BLG) Field Effect Transistor (FET) using doped semiconductors (with a bandgap) as source and drain to obtain unipolar complementary transistors. To simulate…

Mesoscale and Nanoscale Physics · Physics 2016-11-15 Kausik Majumdar , Kota V. R. M. Murali , Navakanta Bhat , Fengnian Xia , Yu-Ming Lin

We have investigated the microwave response of nanotube Josephson junctions at 600-900 MHz at microwave powers corresponding to currents from 0 to $2\times I_{\mathrm C}$ in the junction. Compared with theoretical modeling, the response of…

Mesoscale and Nanoscale Physics · Physics 2015-08-18 Pasi Häkkinen , Aurélien Fay , Dmitry Golubev , Pasi Lähteenmäki , Pertti Hakonen

We propose a Heterojunction Vertical Tunneling FET and show using self-consistent ballistic quantum transport simulations that it can provide very steep subthreshold swings and high ON current, thereby improving the scalability of Tunnel…

Mesoscale and Nanoscale Physics · Physics 2011-03-17 Kartik Ganapathi , Sayeef Salahuddin

The p-n junction diode and field-effect transistor (FET) are the two most ubiquitous building blocks of modern electronics and optoelectronics. In recent years, the emergence of reduced dimensionality materials has suggested that these…

We report on microwave operation of top-gated single carbon nanotube transistors. From transmission measurements in the 0.1-1.6 GHz range, we deduce device transconductance gm and gate-nanotube capacitance Cg of micro- and nanometric…

There is currently much interest in materials and structures that provide coupled ferroelectric and ferromagnetic responses, with a long-term goal of developing new memories and spintronic logic elements. Within the field there is a focus…

Two-dimensional (2D) materials, such as molybdenum disulfide (MoS2), have been shown to exhibit excellent electrical and optical properties. The semiconducting nature of MoS2 allows it to overcome the shortcomings of zero-bandgap graphene,…

Mesoscale and Nanoscale Physics · Physics 2012-09-17 Han Wang , Lili Yu , Yi-Hsien Lee , Yumeng Shi , Allen Hsu , Matthew Chin , Lain-Jong Li , Madan Dubey , Jing Kong , Tomas Palacios

Integrating nano-scale objects, such as single molecules or carbon nanotubes, into impedance transformers and performing radio-frequency measurements allows for high time-resolution transport measurements with improved signal-to-noise…

Mesoscale and Nanoscale Physics · Physics 2012-09-05 G. Puebla-Hellmann , A. Wallraff

The lack of an easily realizable complementary circuit technology offering low static power consumption has been limiting the utilization of other semiconductor materials than silicon. In this publication, a novel depletion mode JFET based…

Applied Physics · Physics 2021-02-02 Artto Aurola , Vladislav Marochkin , Mika Laiho

CMOS-transistors circuits have been used as a conventional approach for designing an analog multiplier in modern era of industrial electronics. However, previous studies have shown, that based on the working region of transistors, such as…

Emerging Technologies · Computer Science 2019-08-28 Aidos Kanapyanov , Olga Krestinskaya

Floating gate transistor is the basic building block of non-volatile flash memory, which is one of the most widely used memory gadgets in modern micro and nano electronic applications. Recently there has been a surge of interest to…

Mesoscale and Nanoscale Physics · Physics 2015-08-12 Nahid M. Hossain , Masud H. Chowdhury

Single electron transistors (SETs) are fabricated by placing single walled carbon nanotubes (SWNTs) on a 100 nm wide local Al/Al2O3 bottom gate and then contacting with Pd electrodes. Coulomb oscillations up to 125 K were observed and…

Mesoscale and Nanoscale Physics · Physics 2009-11-13 Paul Stokes , Saiful I. Khondaker

We propose a device that can operate as a magneto-resistive switch or oscillator. The device is based on a spin-thermo-electronic control of the exchange coupling of two strong ferromagnets through a weakly ferromagnetic spacer. We show…

Mesoscale and Nanoscale Physics · Physics 2009-09-29 A. M. Kadigrobov , R. I. Shekhter , M. Jonson , V. Korenivski

Cryogenic field-effect transistors (FETs) offer great potential for a wide range of applications, the most notable example being classical control electronics for quantum information processors. In the latter context, on-chip FETs with low…

Mesoscale and Nanoscale Physics · Physics 2024-09-19 E. Icking , D. Emmerich , K. Watanabe , T. Taniguchi , B. Beschoten , M. C. Lemme , J. Knoch , C. Stampfer

Nano-electro-opto-mechanical systems enable the synergistic coexistence of electrical, mechanical, and optical signals on a chip to realize new functions. Most of the technology platforms proposed for the fabrication of these systems so far…

The Cooper-pair transistor (CPT), a small superconducting island enclosed between two Josephson weak links, is the atomic building block of various superconducting quantum circuits. Utilizing gate-tunable semiconductor channels as weak…

Mesoscale and Nanoscale Physics · Physics 2020-03-05 Alex Proutski , Dominique Laroche , Bas van 't Hooft , Peter Krogstrup , Jesper Nygård , Leo P. Kouwenhoven , Attila Geresdi

Building smaller transistors with enhanced functionality is critical in extending the limits of Moores law and meeting the demands of the electronics industry. Here we demonstrate transistor operation in a suspended single carbon nanotube…

Mesoscale and Nanoscale Physics · Physics 2016-07-12 Robert McCoy , Fredrick Anderson , Eric L. Carter , Robinson L. Smith

We have fabricated carbon nanotube (CN) field-effect transistors with multiple, individually addressable gate segments. The devices exhibit markedly different transistor characteristics when switched using gate segments controlling the…

Mesoscale and Nanoscale Physics · Physics 2009-11-10 S. J. Wind , J. Appenzeller , Ph. Avouris